IRG7PH42UD-EP

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Rise Time-Max :

41ns

Gate Charge :

157nC

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Through Hole

Number of Elements :

1

Td (on/off) @ 25°C :

25ns/229ns

Power Dissipation :

320W

Lead Free :

Lead Free

Height :

20.7mm

IGBT Type :

Trench

Transistor Element Material :

SILICON

Turn On Time :

51 ns

Number of Pins :

3

Package / Case :

TO-247-3

Turn-Off Delay Time :

229 ns

Fall Time-Max (tf) :

86ns

Current - Collector Pulsed (Icm) :

90A

Vce(on) (Max) @ Vge, Ic :

2V @ 15V, 30A

Mounting Type :

Through Hole

Collector Emitter Breakdown Voltage :

1.2kV

Max Collector Current :

85A

Packaging :

Tube

Element Configuration :

Single

Reverse Recovery Time :

153 ns

Length :

15.87mm

Factory Lead Time :

14 Weeks

Switching Energy :

2.11mJ (on), 1.18mJ (off)

Test Condition :

600V, 30A, 10 Ω, 15V

Number of Terminations :

3

Width :

5.3086mm

Voltage - Collector Emitter Breakdown (Max) :

1200V

Polarity/Channel Type :

N-Channel

Radiation Hardening :

No

Weight :

38.000013g

Turn On Delay Time :

25 ns

ECCN Code :

EAR99

Collector Emitter Saturation Voltage :

2V

Transistor Application :

POWER CONTROL

Input Type :

Standard

Max Power Dissipation :

320W

RoHS Status :

RoHS Compliant

Collector Emitter Voltage (VCEO) :

2V

JEDEC-95 Code :

TO-247AD

Case Connection :

COLLECTOR

Gate-Emitter Thr Voltage-Max :

6V

Turn Off Time-Nom (toff) :

444 ns

Published :

2004