IRG7PH30K10DPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

JEDEC-95 Code :

TO-247AC

Turn Off Time-Nom (toff) :

390 ns

Height :

20.7mm

Vce(on) (Max) @ Vge, Ic :

2.35V @ 15V, 9A

Current - Collector Pulsed (Icm) :

27A

Test Condition :

600V, 9A, 22 Ω, 15V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

MATTE TIN OVER NICKEL

Switching Energy :

530μJ (on), 380μJ (off)

REACH SVHC :

No SVHC

Number of Terminations :

3

Packaging :

Tube

Published :

2009

ECCN Code :

EAR99

Width :

5.3086mm

Power Dissipation :

180W

Package / Case :

TO-247-3

Transistor Element Material :

SILICON

Td (on/off) @ 25°C :

14ns/110ns

Length :

15.87mm

Max Collector Current :

30A

Gate-Emitter Thr Voltage-Max :

7.5V

Number of Elements :

1

Number of Pins :

3

Element Configuration :

Single

Collector Emitter Voltage (VCEO) :

2.35V

Collector Emitter Breakdown Voltage :

1.2kV

Rise Time-Max :

41ns

IGBT Type :

Trench

Lead Free :

Lead Free

Peak Reflow Temperature (Cel) :

250

Voltage - Collector Emitter Breakdown (Max) :

1200V

RoHS Status :

RoHS Compliant

Turn On Delay Time :

23 ns

Radiation Hardening :

No

Operating Temperature :

-55°C~150°C TJ

Polarity/Channel Type :

N-Channel

Time@Peak Reflow Temperature-Max (s) :

30

Mounting Type :

Through Hole

Max Power Dissipation :

180W

Reverse Recovery Time :

140ns

Fall Time-Max (tf) :

56ns

JESD-609 Code :

e3

Mount :

Through Hole

Turn On Time :

34 ns

Case Connection :

COLLECTOR

Turn-Off Delay Time :

130 ns

Input Type :

Standard

Gate Charge :

45nC

Collector Emitter Saturation Voltage :

2.35V

Transistor Application :

POWER CONTROL