IRG4CC50UB

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Mfr.Part #
IRG4CC50UB
Manufacturer
Infineon Technologies
Package / Case
Die
Datasheet
Download
Description
IGBT DIE
Stock
29,078
In Stock :
29,078

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - IGBTs - Single
Current - Collector (Ic) (Max) :
55A
Terminal Position :
UPPER
Package / Case :
Die
Number of Elements :
1
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Vce(on) (Max) @ Vge, Ic :
2V @ 15V, 10A
JESD-609 Code :
e0
Surface Mount :
yes
ECCN Code :
EAR99
Terminal Form :
NO LEAD
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Qualification Status :
Not Qualified
Configuration :
Single
Packaging :
Bulk
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Mounting Type :
Through Hole
Terminal Finish :
Tin/Lead (Sn/Pb)
Additional Feature :
ULTRA FAST SPEED
Input Type :
Standard
Polarity/Channel Type :
N-Channel
RoHS Status :
Non-RoHS Compliant
JESD-30 Code :
O-XUUC-N
Voltage - Collector Emitter Breakdown (Max) :
600V
Gate-Emitter Thr Voltage-Max :
6V
Transistor Element Material :
SILICON
Published :
2017
Datasheets
IRG4CC50UB
Introducing Transistors - IGBTs - Single Infineon Technologies IRG4CC50UB from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:Die, Mounting Type:Through Hole, IRG4CC50UB pinout, IRG4CC50UB datasheet PDF, IRG4CC50UB amp .Beyond Transistors - IGBTs - Single Infineon Technologies IRG4CC50UB ,we also offer IXYT25N250CHV, IXYX140N120A4, IXYH30N450HV, Our vast inventory has you covered. Contact us now for immediate solutions.



IRG4CC50UB datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at

IRG4CC50UB Description


IRG4CC50UB is a type of N-channel IGBT developed by ON Semiconductor. It integrates the advantages of the high input impedance of MOSFET and the low turn-on voltage drop of GTR. TIG074E8-TL-H IGBT, as a new type of power semiconductor field-controlled self-shutdown device, integrates the high-speed performance of power MOSFET and the low resistance of bipolar devices. It has high input impedance, low voltage control power consumption, simple control circuit, high voltage resistance, large current capacity, and other characteristics, therefore, it has been widely used in various power conversions.



IRG4CC50UB Features


Low-saturation voltage

Low voltage drive

Built-in gate to emitter protection diode

Enhancement type

DV/DT guarantee



IRG4CC50UB Applications


Light-controlling flash applications


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