IRG4BC30FD-STRR

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Peak Reflow Temperature (Cel) :

260

Operating Temperature :

-55°C~150°C TJ

Input Type :

Standard

Current - Collector (Ic) (Max) :

31A

Test Condition :

480V, 17A, 23 Ω, 15V

Current - Collector Pulsed (Icm) :

120A

Number of Elements :

1

Fall Time-Max (tf) :

230ns

JESD-609 Code :

e3

Case Connection :

COLLECTOR

Gate-Emitter Thr Voltage-Max :

6V

Switching Energy :

630μJ (on), 1.39mJ (off)

Terminal Form :

Gull wing

Time@Peak Reflow Temperature-Max (s) :

30

Reverse Recovery Time :

42ns

Terminal Position :

Single

Published :

2004

Gate Charge :

51nC

Turn On Time :

69 ns

Surface Mount :

yes

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-PSSO-G2

Vce(on) (Max) @ Vge, Ic :

1.8V @ 15V, 17A

Voltage - Collector Emitter Breakdown (Max) :

600V

Number of Terminations :

2

Transistor Application :

POWER CONTROL

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Packaging :

Tape and Reel (TR)

Polarity/Channel Type :

N-Channel

Qualification Status :

Not Qualified

Mounting Type :

Surface Mount

Power - Max :

100W

Power Dissipation-Max (Abs) :

100W

RoHS Status :

Non-RoHS Compliant

Gate-Emitter Voltage-Max :

20V

Td (on/off) @ 25°C :

42ns/230ns

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Element Material :

SILICON

Turn Off Time-Nom (toff) :

620 ns