IRG4BC20F-SPBF
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- Mfr.Part #
- IRG4BC20F-SPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- IGBT 600V 16A 60W TO220-3
- Stock
- 25,403
- In Stock ：
- 25,403
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - IGBTs - Single
- Gate Charge :
- 27nC
- Td (on/off) @ 25°C :
- 24ns/190ns
- Current - Collector Pulsed (Icm) :
- 64A
- Package / Case :
- TO-220-3
- Voltage - Collector Emitter Breakdown (Max) :
- 600V
- Test Condition :
- 480V, 9A, 50 Ω, 15V
- Power - Max :
- 60W
- Vce(on) (Max) @ Vge, Ic :
- 2V @ 15V, 9A
- Packaging :
- Tube
- Current - Collector (Ic) (Max) :
- 16A
- Mounting Type :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Input Type :
- Standard
- Switching Energy :
- 70μJ (on), 600μJ (off)
- Published :
- 1997
- Datasheets
- IRG4BC20F-SPBF
IRG4BC20F-SPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
IRG4BC20F-SPBF Description
Infineon Technologies is a single IGBT from the manufacturer Infineon Technologies with Gate Charge of 27nC. IRG4BC20F-SPBF has 3 pins and it is available in Tube packaging way. The maximum power dissipation of the IRG4BC20F-SPBF is 60W and its Current - Collector (Ic) (Max) is 16A.
IRG4BC20F-SPBF Features
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Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching,20 kHz in resonant mode).
-
Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3
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IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations
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Industry standard D2Pak package
IRG4BC20F-SPBF Applications
-
Generation 4 IGBTs offer highest efficiencies available
-
IGBTs optimized for specific application conditions
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HEXFRED diodes optimized for performance with IGBTs . Minimized recovery characteristics require less/no snubbing
-
Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBTs
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