IRFBL3703

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain Current-Max (Abs) (ID) :

260A

Gate Charge (Qg) (Max) @ Vgs :

209nC @ 10V

Terminal Position :

Single

Packaging :

Tube

Current - Continuous Drain (Id) @ 25°C :

260A Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DS Breakdown Voltage-Min :

30V

Avalanche Energy Rating (Eas) :

1700 mJ

Drain to Source Voltage (Vdss) :

30V

Drain-source On Resistance-Max :

0.0036Ohm

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

JESD-30 Code :

R-PSSO-F2

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

8250pF @ 25V

RoHS Status :

Non-RoHS Compliant

Additional Feature :

AVALANCHE RATED

Configuration :

SINGLE WITH BUILT-IN DIODE

Case Connection :

DRAIN

Drive Voltage (Max Rds On,Min Rds On) :

7V 10V

Pulsed Drain Current-Max (IDM) :

1000A

Peak Reflow Temperature (Cel) :

260

Surface Mount :

yes

Terminal Finish :

MATTE TIN OVER NICKEL

Time@Peak Reflow Temperature-Max (s) :

30

Terminal Form :

Flat

JESD-609 Code :

e3

Qualification Status :

Not Qualified

Vgs (Max) :

±20V

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

2.5m Ω @ 76A, 10V

Power Dissipation-Max :

3.8W Ta 300W Tc

Series :

HEXFET®

Number of Elements :

1

Package / Case :

Super D2-Pak

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

4V @ 250µA

Number of Terminations :

2