IRFBG30

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Mfr.Part #
IRFBG30
Manufacturer
Vishay
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 1000V 3.1A TO220AB
Stock
114,664
In Stock :
114,664

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Height :
9.01mm
Continuous Drain Current (ID) :
3.1A
RoHS Status :
Non-RoHS Compliant
Mounting Type :
Through Hole
Weight :
6.000006g
Number of Elements :
1
Mount :
Through Hole
Rds On (Max) @ Id, Vgs :
5Ohm @ 1.9A, 10V
Gate to Source Voltage (Vgs) :
20V
Supplier Device Package :
TO-220AB
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Package / Case :
TO-220-3
Rise Time :
25ns
Drive Voltage (Max Rds On,Min Rds On) :
10V
Fall Time (Typ) :
20 ns
Vgs (Max) :
±20V
Drain to Source Resistance :
5Ohm
Rds On Max :
5 Ω
Number of Channels :
1
Current - Continuous Drain (Id) @ 25°C :
3.1A Tc
Drain to Source Breakdown Voltage :
1kV
Power Dissipation :
125W
Min Operating Temperature :
-55°C
REACH SVHC :
Unknown
FET Type :
N-Channel
Voltage - Rated DC :
1kV
Element Configuration :
Single
Current Rating :
3.1A
Nominal Vgs :
4 V
Width :
4.7mm
Operating Temperature :
-55°C~150°C TJ
Input Capacitance :
980pF
Length :
10.41mm
Packaging :
Tube
Published :
2014
Input Capacitance (Ciss) (Max) @ Vds :
980pF @ 25V
Turn On Delay Time :
12 ns
Vgs(th) (Max) @ Id :
4V @ 250µA
Max Operating Temperature :
150°C
Turn-Off Delay Time :
89 ns
Drain to Source Voltage (Vdss) :
1000V
Number of Pins :
3
Power Dissipation-Max :
125W Tc
Lead Free :
Contains Lead
Gate Charge (Qg) (Max) @ Vgs :
80nC @ 10V
Datasheets
IRFBG30
Introducing Transistors - FETs, MOSFETs - Single Vishay IRFBG30 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Package / Case:TO-220-3, Number of Channels:1, Operating Temperature:-55°C~150°C TJ, Number of Pins:3, IRFBG30 pinout, IRFBG30 datasheet PDF, IRFBG30 amp .Beyond Transistors - FETs, MOSFETs - Single Vishay IRFBG30 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay IRFBG30


N-Channel Tube 5Ohm @ 1.9A, 10V ±20V 980pF @ 25V 80nC @ 10V 1000V TO-220-3

IRFBG30 Description


The IRFBG30 is a Third generation Power MOSFET from Vishay that provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.



IRFBG30 Features


  • Dynamic dV/dt Rating

  • Repetitive Avalanche Rated

  • Fast Switching

  • Ease of Paralleling

  • Simple Drive Requirements

  • Compliant with RoHS Directive 2002/95/EC



IRFBG30 Applications


  • Industrial



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