IRFBG20PBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Current Rating :

1.4A

Rds On Max :

11 Ω

Vgs(th) (Max) @ Id :

4V @ 250µA

Input Capacitance :

500pF

Packaging :

Tube

Rise Time :

17ns

Current - Continuous Drain (Id) @ 25°C :

1.4A Tc

Operating Temperature :

-55°C~150°C TJ

Mount :

Through Hole

Rds On (Max) @ Id, Vgs :

11Ohm @ 840mA, 10V

FET Type :

N-Channel

Number of Channels :

1

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain to Source Resistance :

11Ohm

Max Junction Temperature (Tj) :

150°C

Threshold Voltage :

4V

Nominal Vgs :

4 V

Fall Time (Typ) :

31 ns

REACH SVHC :

Unknown

Drain to Source Breakdown Voltage :

1kV

Turn On Delay Time :

9.4 ns

Power Dissipation :

54W

Package / Case :

TO-220-3

Factory Lead Time :

8 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Voltage - Rated DC :

1kV

Max Operating Temperature :

150°C

Mounting Type :

Through Hole

Vgs (Max) :

±20V

Weight :

6.000006g

Continuous Drain Current (ID) :

1.4A

Lead Free :

Lead Free

Min Operating Temperature :

-55°C

Element Configuration :

Single

Supplier Device Package :

TO-220AB

Number of Elements :

1

Gate to Source Voltage (Vgs) :

20V

RoHS Status :

ROHS3 Compliant

Length :

10.41mm

Power Dissipation-Max :

54W Tc

Published :

2014

Number of Pins :

3

Gate Charge (Qg) (Max) @ Vgs :

38nC @ 10V

Width :

4.7mm

Input Capacitance (Ciss) (Max) @ Vds :

500pF @ 25V

Turn-Off Delay Time :

58 ns

Height :

19.89mm

Resistance :

11Ohm

Drain to Source Voltage (Vdss) :

1000V

Radiation Hardening :

No