IRFBF30SPBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Element Configuration :

Single

Height :

4.83mm

Turn On Delay Time :

14 ns

Turn-Off Delay Time :

90 ns

Peak Reflow Temperature (Cel) :

260

JESD-30 Code :

R-PSSO-G2

Mount :

Surface Mount

Gate to Source Voltage (Vgs) :

20V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Published :

2016

Input Capacitance (Ciss) (Max) @ Vds :

1200pF @ 25V

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

125W

Vgs(th) (Max) @ Id :

4V @ 250µA

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

78nC @ 10V

Length :

10.41mm

Current - Continuous Drain (Id) @ 25°C :

3.6A Tc

Pin Count :

4

Vgs (Max) :

±20V

Weight :

1.437803g

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

40

FET Type :

N-Channel

Continuous Drain Current (ID) :

3.6A

Radiation Hardening :

No

Width :

9.65mm

Avalanche Energy Rating (Eas) :

250 mJ

Operating Temperature :

-55°C~150°C TJ

Additional Feature :

AVALANCHE RATED

Number of Terminations :

2

Number of Pins :

3

Pbfree Code :

yes

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Drain to Source Voltage (Vdss) :

900V

Number of Elements :

1

Fall Time (Typ) :

30 ns

Mounting Type :

Surface Mount

Power Dissipation-Max :

125W Tc

Rise Time :

25ns

Number of Channels :

1

Rds On (Max) @ Id, Vgs :

3.7 Ω @ 2.2A, 10V

Packaging :

Tube

JESD-609 Code :

e3

Case Connection :

DRAIN

Terminal Finish :

Matte Tin (Sn)

DS Breakdown Voltage-Min :

900V

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing