IRFBF30

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Mfr.Part #
IRFBF30
Manufacturer
Vishay
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 900V 3.6A TO220AB
Stock
8,211
In Stock :
8,211

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Mount :
Through Hole
Fall Time (Typ) :
30 ns
Published :
2016
Supplier Device Package :
TO-220AB
Drain to Source Voltage (Vdss) :
900V
Input Capacitance (Ciss) (Max) @ Vds :
1200pF @ 25V
Turn-Off Delay Time :
90 ns
Operating Temperature :
-55°C~150°C TJ
FET Type :
N-Channel
Continuous Drain Current (ID) :
3.6A
Vgs(th) (Max) @ Id :
4V @ 250µA
Turn On Delay Time :
14 ns
Power Dissipation-Max :
125W Tc
Rds On (Max) @ Id, Vgs :
3.7Ohm @ 2.2A, 10V
RoHS Status :
Non-RoHS Compliant
Min Operating Temperature :
-55°C
Max Operating Temperature :
150°C
Package / Case :
TO-220-3
Element Configuration :
Single
Gate Charge (Qg) (Max) @ Vgs :
78nC @ 10V
Vgs (Max) :
±20V
Packaging :
Tube
Gate to Source Voltage (Vgs) :
20V
Rds On Max :
3.7 Ω
Mounting Type :
Through Hole
Drive Voltage (Max Rds On,Min Rds On) :
10V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Current - Continuous Drain (Id) @ 25°C :
3.6A Tc
Rise Time :
25ns
Input Capacitance :
1.2nF
Number of Pins :
3
Drain to Source Resistance :
3.7Ohm
Radiation Hardening :
No
Factory Lead Time :
6 Weeks
Datasheets
IRFBF30
Introducing Transistors - FETs, MOSFETs - Single Vishay IRFBF30 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Package / Case:TO-220-3, Mounting Type:Through Hole, Number of Pins:3, IRFBF30 pinout, IRFBF30 datasheet PDF, IRFBF30 amp .Beyond Transistors - FETs, MOSFETs - Single Vishay IRFBF30 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay IRFBF30


N-Channel Tube 3.7Ohm @ 2.2A, 10V ±20V 1200pF @ 25V 78nC @ 10V 900V TO-220-3

IRFBF30 Overview


CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1200pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.As a result of its turn-off delay time, which is 90 ns, the device has taken time to charge its input capacitance before drain current conduction begins.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 3.7Ohm.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 14 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The transistor must receive a 900V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

IRFBF30 Features


a continuous drain current (ID) of 3.6A
the turn-off delay time is 90 ns
single MOSFETs transistor is 3.7Ohm
a 900V drain to source voltage (Vdss)


IRFBF30 Applications


There are a lot of Vishay Siliconix
IRFBF30 applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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