IRFBF20PBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Resistance :

8Ohm

Nominal Vgs :

4 V

Threshold Voltage :

4V

Gate Charge (Qg) (Max) @ Vgs :

38nC @ 10V

Vgs(th) (Max) @ Id :

4V @ 250µA

REACH SVHC :

Unknown

Lead Free :

Lead Free

Height :

9.01mm

Radiation Hardening :

No

Max Operating Temperature :

150°C

Power Dissipation :

54W

Operating Temperature :

-55°C~150°C TJ

Number of Channels :

1

Number of Pins :

3

Rds On (Max) @ Id, Vgs :

8Ohm @ 1A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

490pF @ 25V

Published :

2011

Drain to Source Breakdown Voltage :

900V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Delay Time :

8 ns

Rds On Max :

8 Ω

Number of Elements :

1

Factory Lead Time :

8 Weeks

Continuous Drain Current (ID) :

1.7A

Gate to Source Voltage (Vgs) :

20V

Mount :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

1.7A Tc

Rise Time :

21ns

Weight :

6.000006g

Mounting Type :

Through Hole

Packaging :

Tube

Length :

10.41mm

RoHS Status :

ROHS3 Compliant

Supplier Device Package :

TO-220AB

Package / Case :

TO-220-3

Power Dissipation-Max :

54W Tc

Width :

4.7mm

Input Capacitance :

490pF

Turn-Off Delay Time :

56 ns

Drain to Source Voltage (Vdss) :

900V

Fall Time (Typ) :

32 ns

FET Type :

N-Channel

Resistance :

6.5Ohm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs (Max) :

±20V

Element Configuration :

Single

Min Operating Temperature :

-55°C