IRFBF20L
- Mfr.Part #
- IRFBF20L
- Manufacturer
- Vishay
- Package / Case
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Datasheet
- Download
- Description
- MOSFET N-CH 900V 1.7A I2PAK
- Stock
- 34,983
- In Stock :
- 34,983
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation-Max :
- 3.1W Ta 54W Tc
- Packaging :
- Tube
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Vgs (Max) :
- ±20V
- Current - Continuous Drain (Id) @ 25°C :
- 1.7A Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 38nC @ 10V
- Current Rating :
- 1.7A
- Turn-Off Delay Time :
- 56 ns
- RoHS Status :
- Non-RoHS Compliant
- Drain to Source Breakdown Voltage :
- 900V
- Drain to Source Voltage (Vdss) :
- 900V
- Input Capacitance :
- 490pF
- FET Type :
- N-Channel
- Voltage - Rated DC :
- 900V
- Rds On (Max) @ Id, Vgs :
- 8Ohm @ 1A, 10V
- Drain to Source Resistance :
- 8Ohm
- Weight :
- 2.387001g
- Element Configuration :
- Single
- Height :
- 9.65mm
- Turn On Delay Time :
- 8 ns
- Min Operating Temperature :
- -55°C
- Continuous Drain Current (ID) :
- 1.7A
- Mount :
- Through Hole
- Mounting Type :
- Through Hole
- Rds On Max :
- 8 Ω
- Lead Free :
- Contains Lead
- Width :
- 4.83mm
- Gate to Source Voltage (Vgs) :
- 20V
- Rise Time :
- 21ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 490pF @ 25V
- Operating Temperature :
- -55°C~150°C TJ
- Published :
- 2016
- Max Operating Temperature :
- 150°C
- Supplier Device Package :
- I2PAK
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Fall Time (Typ) :
- 32 ns
- Number of Channels :
- 1
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Length :
- 10.67mm
- Package / Case :
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Datasheets
- IRFBF20L
N-Channel Tube 8Ohm @ 1A, 10V ±20V 490pF @ 25V 38nC @ 10V 900V TO-262-3 Long Leads, I2Pak, TO-262AA
IRFBF20L Overview
A device's maximum input capacitance is 490pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 1.7A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=900V, and this device has a drain-to-source breakdown voltage of 900V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 56 ns.The Drain-to-Source Resistance (DTS) of a MOSFET is 8Ohm when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 8 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you need to apply a 900V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IRFBF20L Features
a continuous drain current (ID) of 1.7A
a drain-to-source breakdown voltage of 900V voltage
the turn-off delay time is 56 ns
single MOSFETs transistor is 8Ohm
a 900V drain to source voltage (Vdss)
IRFBF20L Applications
There are a lot of Vishay Siliconix
IRFBF20L applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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