IRFBE30STRR

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

1300pF @ 25V

Number of Terminations :

3

JESD-30 Code :

R-PSFM-T3

Operating Temperature :

-55°C~150°C TJ

Current - Continuous Drain (Id) @ 25°C :

4.1A Tc

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Packaging :

Tape and Reel (TR)

Pbfree Code :

No

DS Breakdown Voltage-Min :

800V

Vgs(th) (Max) @ Id :

4V @ 250µA

JESD-609 Code :

e0

Qualification Status :

Not Qualified

Terminal Finish :

TIN LEAD

FET Type :

N-Channel

Mounting Type :

Surface Mount

RoHS Status :

Non-RoHS Compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs (Max) :

±20V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Case Connection :

DRAIN

Number of Elements :

1

Configuration :

Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Position :

Single

Drain-source On Resistance-Max :

3Ohm

Rds On (Max) @ Id, Vgs :

3 Ω @ 2.5A, 10V

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Published :

1997

Power Dissipation-Max :

125W Tc

JEDEC-95 Code :

TO-220AB

Continuous Drain Current (ID) :

4.1A

Gate Charge (Qg) (Max) @ Vgs :

78nC @ 10V

Terminal Form :

THROUGH-HOLE

Mount :

Surface Mount

Drain to Source Voltage (Vdss) :

800V