IRFBE30STRLPBF
- Mfr.Part #
- IRFBE30STRLPBF
- Manufacturer
- Vishay
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 800V 4.1A D2PAK
- Stock
- 791
- In Stock :
- 791
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Elements :
- 1
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Power Dissipation-Max :
- 125W Tc
- Gate to Source Voltage (Vgs) :
- 20V
- Operating Temperature :
- -55°C~150°C TJ
- Factory Lead Time :
- 8 Weeks
- Vgs (Max) :
- ±20V
- Max Operating Temperature :
- 150°C
- Packaging :
- Tape and Reel (TR)
- FET Type :
- N-Channel
- Drain to Source Resistance :
- 3Ohm
- Lead Free :
- Lead Free
- Rds On Max :
- 3 Ω
- Turn-Off Delay Time :
- 82 ns
- Radiation Hardening :
- No
- Gate Charge (Qg) (Max) @ Vgs :
- 78nC @ 10V
- Mounting Type :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Rise Time :
- 33ns
- Rds On (Max) @ Id, Vgs :
- 3Ohm @ 2.5A, 10V
- Mount :
- Surface Mount
- Drain to Source Voltage (Vdss) :
- 800V
- Power Dissipation :
- 125W
- Turn On Delay Time :
- 12 ns
- Published :
- 2016
- Current - Continuous Drain (Id) @ 25°C :
- 4.1A Tc
- Min Operating Temperature :
- -55°C
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Continuous Drain Current (ID) :
- 4.1A
- Input Capacitance (Ciss) (Max) @ Vds :
- 1300pF @ 25V
- Number of Pins :
- 3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Input Capacitance :
- 1.3nF
- Fall Time (Typ) :
- 30 ns
- Supplier Device Package :
- D2PAK
- Datasheets
- IRFBE30STRLPBF
N-Channel Tape & Reel (TR) 3Ohm @ 2.5A, 10V ±20V 1300pF @ 25V 78nC @ 10V 800V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRFBE30STRLPBF Overview
The maximum input capacitance of this device is 1300pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 4.1A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 82 ns.MOSFETs exhibit Drain-to-Source Resistance when a specific gate-to-source voltage (VGS) is applied to bias them into the on state, and this device's resistance is 3Ohm.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 12 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.The drain-to-source voltage (Vdss) of this transistor needs to be at 800V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
IRFBE30STRLPBF Features
a continuous drain current (ID) of 4.1A
the turn-off delay time is 82 ns
single MOSFETs transistor is 3Ohm
a 800V drain to source voltage (Vdss)
IRFBE30STRLPBF Applications
There are a lot of Vishay Siliconix
IRFBE30STRLPBF applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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