IRFBE30STRLPBF

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Mfr.Part #
IRFBE30STRLPBF
Manufacturer
Vishay
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 800V 4.1A D2PAK
Stock
791
In Stock :
791

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Number of Elements :
1
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ Id :
4V @ 250µA
Power Dissipation-Max :
125W Tc
Gate to Source Voltage (Vgs) :
20V
Operating Temperature :
-55°C~150°C TJ
Factory Lead Time :
8 Weeks
Vgs (Max) :
±20V
Max Operating Temperature :
150°C
Packaging :
Tape and Reel (TR)
FET Type :
N-Channel
Drain to Source Resistance :
3Ohm
Lead Free :
Lead Free
Rds On Max :
3 Ω
Turn-Off Delay Time :
82 ns
Radiation Hardening :
No
Gate Charge (Qg) (Max) @ Vgs :
78nC @ 10V
Mounting Type :
Surface Mount
RoHS Status :
ROHS3 Compliant
Rise Time :
33ns
Rds On (Max) @ Id, Vgs :
3Ohm @ 2.5A, 10V
Mount :
Surface Mount
Drain to Source Voltage (Vdss) :
800V
Power Dissipation :
125W
Turn On Delay Time :
12 ns
Published :
2016
Current - Continuous Drain (Id) @ 25°C :
4.1A Tc
Min Operating Temperature :
-55°C
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Continuous Drain Current (ID) :
4.1A
Input Capacitance (Ciss) (Max) @ Vds :
1300pF @ 25V
Number of Pins :
3
Drive Voltage (Max Rds On,Min Rds On) :
10V
Input Capacitance :
1.3nF
Fall Time (Typ) :
30 ns
Supplier Device Package :
D2PAK
Datasheets
IRFBE30STRLPBF
Introducing Transistors - FETs, MOSFETs - Single Vishay IRFBE30STRLPBF from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, Number of Pins:3, IRFBE30STRLPBF pinout, IRFBE30STRLPBF datasheet PDF, IRFBE30STRLPBF amp .Beyond Transistors - FETs, MOSFETs - Single Vishay IRFBE30STRLPBF ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay IRFBE30STRLPBF


N-Channel Tape & Reel (TR) 3Ohm @ 2.5A, 10V ±20V 1300pF @ 25V 78nC @ 10V 800V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IRFBE30STRLPBF Overview


The maximum input capacitance of this device is 1300pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 4.1A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 82 ns.MOSFETs exhibit Drain-to-Source Resistance when a specific gate-to-source voltage (VGS) is applied to bias them into the on state, and this device's resistance is 3Ohm.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 12 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.The drain-to-source voltage (Vdss) of this transistor needs to be at 800V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

IRFBE30STRLPBF Features


a continuous drain current (ID) of 4.1A
the turn-off delay time is 82 ns
single MOSFETs transistor is 3Ohm
a 800V drain to source voltage (Vdss)


IRFBE30STRLPBF Applications


There are a lot of Vishay Siliconix
IRFBE30STRLPBF applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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