IRFBE30SPBF

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Mfr.Part #
IRFBE30SPBF
Manufacturer
Vishay
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 800V 4.1A D2PAK
Stock
821
In Stock :
821

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Width :
9.65mm
Mount :
Surface Mount
Turn On Delay Time :
12 ns
Resistance :
3Ohm
RoHS Status :
ROHS3 Compliant
Published :
2015
Turn-Off Delay Time :
82 ns
Number of Channels :
1
Fall Time (Typ) :
30 ns
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Current - Continuous Drain (Id) @ 25°C :
4.1A Tc
Packaging :
Tube
Weight :
1.437803g
Input Capacitance :
1.3nF
Continuous Drain Current (ID) :
4.1A
Gate to Source Voltage (Vgs) :
20V
Rds On (Max) @ Id, Vgs :
3Ohm @ 2.5A, 10V
Factory Lead Time :
8 Weeks
Drain to Source Resistance :
3Ohm
Gate Charge (Qg) (Max) @ Vgs :
78nC @ 10V
Vgs (Max) :
±20V
Rds On Max :
3 Ω
Length :
10.67mm
Mounting Type :
Surface Mount
Max Operating Temperature :
150°C
Power Dissipation :
125W
Drain to Source Voltage (Vdss) :
800V
Min Operating Temperature :
-55°C
Rise Time :
33ns
Element Configuration :
Single
Vgs(th) (Max) @ Id :
4V @ 250µA
Number of Pins :
3
Drive Voltage (Max Rds On,Min Rds On) :
10V
Input Capacitance (Ciss) (Max) @ Vds :
1300pF @ 25V
Lead Free :
Lead Free
Number of Elements :
1
Supplier Device Package :
D2PAK
Radiation Hardening :
No
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Operating Temperature :
-55°C~150°C TJ
Power Dissipation-Max :
125W Tc
Height :
4.83mm
FET Type :
N-Channel
Datasheets
IRFBE30SPBF
Introducing Transistors - FETs, MOSFETs - Single Vishay IRFBE30SPBF from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Mounting Type:Surface Mount, Number of Pins:3, Operating Temperature:-55°C~150°C TJ, IRFBE30SPBF pinout, IRFBE30SPBF datasheet PDF, IRFBE30SPBF amp .Beyond Transistors - FETs, MOSFETs - Single Vishay IRFBE30SPBF ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay IRFBE30SPBF


N-Channel Tube 3Ohm @ 2.5A, 10V ±20V 1300pF @ 25V 78nC @ 10V 800V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IRFBE30SPBF Overview


A device's maximum input capacitance is 1300pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 4.1A for this device. Drain current refers to the capacity of the device to conduct continuous current.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 82 ns.The Drain-to-Source Resistance (DTS) of a MOSFET is 3Ohm when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 12 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you need to apply a 800V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

IRFBE30SPBF Features


a continuous drain current (ID) of 4.1A
the turn-off delay time is 82 ns
single MOSFETs transistor is 3Ohm
a 800V drain to source voltage (Vdss)


IRFBE30SPBF Applications


There are a lot of Vishay Siliconix
IRFBE30SPBF applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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