IRFBE30SPBF
- Mfr.Part #
- IRFBE30SPBF
- Manufacturer
- Vishay
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 800V 4.1A D2PAK
- Stock
- 821
- In Stock :
- 821
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Width :
- 9.65mm
- Mount :
- Surface Mount
- Turn On Delay Time :
- 12 ns
- Resistance :
- 3Ohm
- RoHS Status :
- ROHS3 Compliant
- Published :
- 2015
- Turn-Off Delay Time :
- 82 ns
- Number of Channels :
- 1
- Fall Time (Typ) :
- 30 ns
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Current - Continuous Drain (Id) @ 25°C :
- 4.1A Tc
- Packaging :
- Tube
- Weight :
- 1.437803g
- Input Capacitance :
- 1.3nF
- Continuous Drain Current (ID) :
- 4.1A
- Gate to Source Voltage (Vgs) :
- 20V
- Rds On (Max) @ Id, Vgs :
- 3Ohm @ 2.5A, 10V
- Factory Lead Time :
- 8 Weeks
- Drain to Source Resistance :
- 3Ohm
- Gate Charge (Qg) (Max) @ Vgs :
- 78nC @ 10V
- Vgs (Max) :
- ±20V
- Rds On Max :
- 3 Ω
- Length :
- 10.67mm
- Mounting Type :
- Surface Mount
- Max Operating Temperature :
- 150°C
- Power Dissipation :
- 125W
- Drain to Source Voltage (Vdss) :
- 800V
- Min Operating Temperature :
- -55°C
- Rise Time :
- 33ns
- Element Configuration :
- Single
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Number of Pins :
- 3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1300pF @ 25V
- Lead Free :
- Lead Free
- Number of Elements :
- 1
- Supplier Device Package :
- D2PAK
- Radiation Hardening :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -55°C~150°C TJ
- Power Dissipation-Max :
- 125W Tc
- Height :
- 4.83mm
- FET Type :
- N-Channel
- Datasheets
- IRFBE30SPBF
N-Channel Tube 3Ohm @ 2.5A, 10V ±20V 1300pF @ 25V 78nC @ 10V 800V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRFBE30SPBF Overview
A device's maximum input capacitance is 1300pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 4.1A for this device. Drain current refers to the capacity of the device to conduct continuous current.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 82 ns.The Drain-to-Source Resistance (DTS) of a MOSFET is 3Ohm when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 12 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you need to apply a 800V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IRFBE30SPBF Features
a continuous drain current (ID) of 4.1A
the turn-off delay time is 82 ns
single MOSFETs transistor is 3Ohm
a 800V drain to source voltage (Vdss)
IRFBE30SPBF Applications
There are a lot of Vishay Siliconix
IRFBE30SPBF applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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