IRFBE30S

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Supplier Device Package :

D2PAK

Max Operating Temperature :

150°C

Current Rating :

4.1A

Drain to Source Breakdown Voltage :

800V

Input Capacitance :

1.3nF

Packaging :

Tube

Rds On Max :

3 Ω

Vgs (Max) :

±20V

Fall Time (Typ) :

30 ns

Drain to Source Voltage (Vdss) :

800V

Width :

9.65mm

Height :

4.83mm

RoHS Status :

Non-RoHS Compliant

Weight :

1.437803g

Operating Temperature :

-55°C~150°C TJ

Vgs(th) (Max) @ Id :

4V @ 250µA

Lead Free :

Contains Lead

Published :

2016

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

3Ohm @ 2.5A, 10V

Mounting Type :

Surface Mount

Gate to Source Voltage (Vgs) :

20V

Gate Charge (Qg) (Max) @ Vgs :

78nC @ 10V

Turn-Off Delay Time :

82 ns

Continuous Drain Current (ID) :

4.1A

Power Dissipation-Max :

125W Tc

Turn On Delay Time :

12 ns

Voltage - Rated DC :

800V

Element Configuration :

Single

Drain to Source Resistance :

3Ohm

Current - Continuous Drain (Id) @ 25°C :

4.1A Tc

Min Operating Temperature :

-55°C

Input Capacitance (Ciss) (Max) @ Vds :

1300pF @ 25V

Mount :

Surface Mount

Rise Time :

33ns

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Drive Voltage (Max Rds On,Min Rds On) :

10V

Length :

10.67mm

Number of Channels :

1