IRFBE30PBF-BE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

Product Type :

MOSFET

Subcategory :

MOSFETs

Current - Continuous Drain (Id) @ 25°C :

4.1A (Tc)

Minimum Operating Temperature :

- 55 C

Supplier Device Package :

TO-220AB

Gate Charge (Qg) (Max) @ Vgs :

78 nC @ 10 V

Power Dissipation (Max) :

125W (Tc)

Maximum Operating Temperature :

+ 150 C

Operating Temperature :

-55°C ~ 150°C (TJ)

Transistor Type :

1 N-Channel

Package :

Tube

Configuration :

Single

Mounting Style :

Through Hole

Channel Mode :

Enhancement

Mounting Type :

Through Hole

Drain to Source Voltage (Vdss) :

800 V

Input Capacitance (Ciss) (Max) @ Vds :

1300 pF @ 25 V

Manufacturer :

Vishay

Product Category :

MOSFET

RoHS :

Details

Number of Channels :

1 Channel

FET Type :

N-Channel

Package / Case :

TO-220-3

Brand :

Vishay / Siliconix

Packaging :

Tube

Rise Time :

33 ns

Product Status :

Active

Rds On (Max) @ Id, Vgs :

3Ohm @ 2.5A, 10V

Series :

-

FET Feature :

-

Transistor Polarity :

N-Channel

Base Product Number :

IRFBE30

Vgs(th) (Max) @ Id :

4V @ 250µA