IRFBE30PBF-BE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Through Hole

Product Type :

MOSFET

Input Capacitance (Ciss) (Max) @ Vds :

1300 pF @ 25 V

Operating Temperature :

-55°C ~ 150°C (TJ)

FET Type :

N-Channel

Maximum Operating Temperature :

+ 150 C

RoHS :

Details

Rise Time :

33 ns

Product Status :

Active

Series :

-

Vgs (Max) :

±20V

Number of Channels :

1 Channel

Product Category :

MOSFET

Gate Charge (Qg) (Max) @ Vgs :

78 nC @ 10 V

FET Feature :

-

Transistor Polarity :

N-Channel

Subcategory :

MOSFETs

Transistor Type :

1 N-Channel

Manufacturer :

Vishay

Packaging :

Tube

Mounting Style :

Through Hole

Channel Mode :

Enhancement

Supplier Device Package :

TO-220AB

Current - Continuous Drain (Id) @ 25°C :

4.1A (Tc)

Rds On (Max) @ Id, Vgs :

3Ohm @ 2.5A, 10V

Power Dissipation (Max) :

125W (Tc)

Vgs(th) (Max) @ Id :

4V @ 250µA

Configuration :

Single

Package / Case :

TO-220-3

Drain to Source Voltage (Vdss) :

800 V

Base Product Number :

IRFBE30

Minimum Operating Temperature :

- 55 C

Brand :

Vishay / Siliconix

Package :

Tube