IRFBE30L

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

33ns

Turn On Delay Time :

12 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Width :

4.83mm

Vgs (Max) :

±20V

Input Capacitance :

1.3nF

Height :

9.65mm

Power Dissipation-Max :

125W Tc

Continuous Drain Current (ID) :

4.1A

Current - Continuous Drain (Id) @ 25°C :

4.1A Tc

Min Operating Temperature :

-55°C

Turn-Off Delay Time :

82 ns

Operating Temperature :

-55°C~150°C TJ

Drain to Source Breakdown Voltage :

800V

Input Capacitance (Ciss) (Max) @ Vds :

1300pF @ 25V

RoHS Status :

Non-RoHS Compliant

Mount :

Through Hole

Lead Free :

Contains Lead

Weight :

2.387001g

Vgs(th) (Max) @ Id :

4V @ 250µA

Mounting Type :

Through Hole

Packaging :

Tube

FET Type :

N-Channel

Published :

2016

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate Charge (Qg) (Max) @ Vgs :

78nC @ 10V

Length :

10.67mm

Rds On Max :

3 Ω

Current Rating :

4.1A

Rds On (Max) @ Id, Vgs :

3Ohm @ 2.5A, 10V

Number of Channels :

1

Supplier Device Package :

I2PAK

Drain to Source Voltage (Vdss) :

800V

Gate to Source Voltage (Vgs) :

20V

Drain to Source Resistance :

3Ohm

Voltage - Rated DC :

800V

Max Operating Temperature :

150°C

Fall Time (Typ) :

30 ns

Element Configuration :

Single

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA