IRFBE30

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Finish :

TIN LEAD

Power Dissipation-Max :

125W Tc

Input Capacitance (Ciss) (Max) @ Vds :

1300pF @ 25V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain-source On Resistance-Max :

3Ohm

Drain to Source Voltage (Vdss) :

800V

Qualification Status :

Not Qualified

Gate Charge (Qg) (Max) @ Vgs :

78nC @ 10V

FET Type :

N-Channel

Configuration :

Single

Pbfree Code :

No

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Terminal Form :

THROUGH-HOLE

Transistor Element Material :

SILICON

Terminal Position :

Single

JESD-609 Code :

e0

DS Breakdown Voltage-Min :

800V

Continuous Drain Current (ID) :

4.1A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

4.1A Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mount :

Surface Mount

Rds On (Max) @ Id, Vgs :

3 Ω @ 2.5A, 10V

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~150°C TJ

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

3

JEDEC-95 Code :

TO-220AB

Vgs (Max) :

±20V

Mounting Type :

Surface Mount

RoHS Status :

Non-RoHS Compliant

Vgs(th) (Max) @ Id :

4V @ 250µA

Number of Elements :

1

JESD-30 Code :

R-PSFM-T3

Published :

1997

Case Connection :

DRAIN