IRFBE20PBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Through Hole

Threshold Voltage :

4V

Current Rating :

1.8A

Vgs(th) (Max) @ Id :

4V @ 250µA

Current - Continuous Drain (Id) @ 25°C :

1.8A Tc

Power Dissipation :

54W

Power Dissipation-Max :

54W Tc

Radiation Hardening :

No

Number of Pins :

3

Fall Time (Typ) :

27 ns

Vgs (Max) :

±20V

Gate Charge (Qg) (Max) @ Vgs :

38nC @ 10V

REACH SVHC :

Unknown

Voltage - Rated DC :

800V

Weight :

6.000006g

Turn-Off Delay Time :

58 ns

Length :

10.41mm

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

1.8A

Contact Plating :

Tin

Mounting Type :

Through Hole

Turn On Delay Time :

8.2 ns

Width :

4.7mm

Rds On (Max) @ Id, Vgs :

6.5Ohm @ 1.1A, 10V

Input Capacitance :

530pF

Operating Temperature :

-55°C~150°C TJ

Number of Channels :

1

Rds On Max :

6.5 Ω

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

8 Weeks

Lead Free :

Lead Free

Resistance :

6.5Ohm

Supplier Device Package :

TO-220AB

Gate to Source Voltage (Vgs) :

20V

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rise Time :

17ns

Input Capacitance (Ciss) (Max) @ Vds :

530pF @ 25V

Package / Case :

TO-220-3

Packaging :

Tube

Height :

9.01mm

Drain to Source Voltage (Vdss) :

800V

Nominal Vgs :

4 V

Number of Elements :

1

Element Configuration :

Single

Published :

2014

Max Operating Temperature :

150°C

Drain to Source Breakdown Voltage :

800V

Min Operating Temperature :

-55°C

Drain to Source Resistance :

6.5Ohm