IRFBC40S
- Mfr.Part #
- IRFBC40S
- Manufacturer
- Vishay
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 6.2A D2PAK
- Stock
- 1,729
- In Stock :
- 1,729
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain to Source Voltage (Vdss) :
- 600V
- Fall Time (Typ) :
- 20 ns
- Rds On Max :
- 1.2 Ω
- Drain to Source Resistance :
- 1.2Ohm
- Number of Channels :
- 1
- Operating Temperature :
- -55°C~150°C TJ
- Current - Continuous Drain (Id) @ 25°C :
- 6.2A Tc
- Input Capacitance (Ciss) (Max) @ Vds :
- 1300pF @ 25V
- Current Rating :
- 6.2A
- Weight :
- 1.437803g
- Turn On Delay Time :
- 13 ns
- Continuous Drain Current (ID) :
- 6.2A
- Number of Pins :
- 3
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Rds On (Max) @ Id, Vgs :
- 1.2Ohm @ 3.7A, 10V
- Power Dissipation-Max :
- 3.1W Ta 130W Tc
- FET Type :
- N-Channel
- Packaging :
- Tube
- Lead Free :
- Contains Lead
- RoHS Status :
- Non-RoHS Compliant
- Gate Charge (Qg) (Max) @ Vgs :
- 60nC @ 10V
- Drain to Source Breakdown Voltage :
- 600V
- Mounting Type :
- Surface Mount
- Mount :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Operating Temperature :
- 150°C
- Supplier Device Package :
- D2PAK
- Voltage - Rated DC :
- 600V
- Min Operating Temperature :
- -55°C
- Published :
- 2016
- Input Capacitance :
- 1.3nF
- Width :
- 9.65mm
- Height :
- 4.83mm
- Power Dissipation :
- 130W
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Rise Time :
- 18ns
- Turn-Off Delay Time :
- 55 ns
- Element Configuration :
- Single
- Vgs (Max) :
- ±20V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Gate to Source Voltage (Vgs) :
- 20V
- Length :
- 10.67mm
- Datasheets
- IRFBC40S
N-Channel Tube 1.2Ohm @ 3.7A, 10V ±20V 1300pF @ 25V 60nC @ 10V 600V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRFBC40S Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 1300pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 6.2A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 600V, and this device has a drainage-to-source breakdown voltage of 600VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 55 ns.This device has a drain-to-source resistance of 1.2Ohm when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 13 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.For this transistor to work, a voltage 600V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IRFBC40S Features
a continuous drain current (ID) of 6.2A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 55 ns
single MOSFETs transistor is 1.2Ohm
a 600V drain to source voltage (Vdss)
IRFBC40S Applications
There are a lot of Vishay Siliconix
IRFBC40S applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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