IRFBC40LCPBF
- Mfr.Part #
- IRFBC40LCPBF
- Manufacturer
- Vishay
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 6.2A TO220AB
- Stock
- 8,019
- In Stock :
- 8,019
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Elements :
- 1
- Continuous Drain Current (ID) :
- 6.2A
- Lead Free :
- Lead Free
- Min Operating Temperature :
- -55°C
- Dual Supply Voltage :
- 600V
- Voltage - Rated DC :
- 600V
- REACH SVHC :
- No SVHC
- Weight :
- 6.000006g
- Vgs (Max) :
- ±30V
- Fall Time (Typ) :
- 17 ns
- Mounting Type :
- Through Hole
- Drain to Source Resistance :
- 1.2Ohm
- Threshold Voltage :
- 4V
- Max Operating Temperature :
- 150°C
- Number of Pins :
- 3
- Termination :
- Through Hole
- Drain to Source Breakdown Voltage :
- 600V
- Gate to Source Voltage (Vgs) :
- 30V
- Turn On Delay Time :
- 12 ns
- FET Type :
- N-Channel
- Resistance :
- 1.2Ohm
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation-Max :
- 125W Tc
- Packaging :
- Tube
- Turn-Off Delay Time :
- 27 ns
- Supplier Device Package :
- TO-220AB
- Rds On Max :
- 1.2 Ω
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Rds On (Max) @ Id, Vgs :
- 1.2Ohm @ 3.7A, 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 39nC @ 10V
- Power Dissipation :
- 125W
- Input Capacitance (Ciss) (Max) @ Vds :
- 1100pF @ 25V
- Width :
- 4.7mm
- Nominal Vgs :
- 4 V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Drain to Source Voltage (Vdss) :
- 600V
- Factory Lead Time :
- 8 Weeks
- Current Rating :
- 6.2A
- Radiation Hardening :
- No
- Element Configuration :
- Single
- Rise Time :
- 20ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Continuous Drain (Id) @ 25°C :
- 6.2A Tc
- Height :
- 9.01mm
- Package / Case :
- TO-220-3
- Number of Channels :
- 1
- Length :
- 10.41mm
- Operating Temperature :
- -55°C~150°C TJ
- Mount :
- Through Hole
- Input Capacitance :
- 1.1nF
- Published :
- 2014
- Datasheets
- IRFBC40LCPBF
N-Channel Tube 1.2Ohm @ 3.7A, 10V ±30V 1100pF @ 25V 39nC @ 10V 600V TO-220-3
IRFBC40LCPBF Overview
The maximum input capacitance of this device is 1100pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 6.2A.When VGS=600V, and ID flows to VDS at 600VVDS, the drain-source breakdown voltage is 600V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 27 ns.MOSFETs exhibit Drain-to-Source Resistance when a specific gate-to-source voltage (VGS) is applied to bias them into the on state, and this device's resistance is 1.2Ohm.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 12 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is 4V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.The drain-to-source voltage (Vdss) of this transistor needs to be at 600V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
IRFBC40LCPBF Features
a continuous drain current (ID) of 6.2A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 27 ns
single MOSFETs transistor is 1.2Ohm
a threshold voltage of 4V
a 600V drain to source voltage (Vdss)
IRFBC40LCPBF Applications
There are a lot of Vishay Siliconix
IRFBC40LCPBF applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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