IRFBC40L
- Mfr.Part #
- IRFBC40L
- Manufacturer
- Vishay
- Package / Case
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 6.2A I2PAK
- Stock
- 41,515
- In Stock :
- 41,515
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Channels :
- 1
- Continuous Drain Current (ID) :
- 6.2A
- Current - Continuous Drain (Id) @ 25°C :
- 6.2A Tc
- Package / Case :
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Rise Time :
- 18ns
- Turn On Delay Time :
- 13 ns
- Packaging :
- Tube
- Min Operating Temperature :
- -55°C
- Mounting Type :
- Through Hole
- Max Operating Temperature :
- 150°C
- Published :
- 2016
- Drain to Source Breakdown Voltage :
- 600V
- Height :
- 9.65mm
- Supplier Device Package :
- I2PAK
- Vgs (Max) :
- ±20V
- Element Configuration :
- Single
- Voltage - Rated DC :
- 600V
- Length :
- 10.67mm
- Current Rating :
- 6.2A
- Fall Time (Typ) :
- 20 ns
- Gate to Source Voltage (Vgs) :
- 20V
- Mount :
- Through Hole
- Input Capacitance :
- 1.3nF
- Width :
- 4.83mm
- Rds On Max :
- 1.2 Ω
- Power Dissipation-Max :
- 3.1W Ta 130W Tc
- Weight :
- 2.387001g
- Input Capacitance (Ciss) (Max) @ Vds :
- 1300pF @ 25V
- FET Type :
- N-Channel
- RoHS Status :
- Non-RoHS Compliant
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Lead Free :
- Contains Lead
- Operating Temperature :
- -55°C~150°C TJ
- Rds On (Max) @ Id, Vgs :
- 1.2Ohm @ 3.7A, 10V
- Drain to Source Resistance :
- 1.2Ohm
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 60nC @ 10V
- Power Dissipation :
- 130W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain to Source Voltage (Vdss) :
- 600V
- Turn-Off Delay Time :
- 55 ns
- Datasheets
- IRFBC40L
N-Channel Tube 1.2Ohm @ 3.7A, 10V ±20V 1300pF @ 25V 60nC @ 10V 600V TO-262-3 Long Leads, I2Pak, TO-262AA
IRFBC40L Overview
A device's maximal input capacitance is 1300pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 6.2A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 600V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 55 ns, which is the time to charge the device's input capacitance before drain current conduction begins.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 1.2Ohm.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 13 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This transistor requires a 600V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IRFBC40L Features
a continuous drain current (ID) of 6.2A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 55 ns
single MOSFETs transistor is 1.2Ohm
a 600V drain to source voltage (Vdss)
IRFBC40L Applications
There are a lot of Vishay Siliconix
IRFBC40L applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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