IRFBC40AS
- Mfr.Part #
- IRFBC40AS
- Manufacturer
- Vishay
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 6.2A D2PAK
- Stock
- 3,608
- In Stock :
- 3,608
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation :
- 125W
- Rds On (Max) @ Id, Vgs :
- 1.2Ohm @ 3.7A, 10V
- Length :
- 10.67mm
- Vgs (Max) :
- ±30V
- Turn-Off Delay Time :
- 31 ns
- Input Capacitance :
- 1.036nF
- Gate to Source Voltage (Vgs) :
- 30V
- Supplier Device Package :
- D2PAK
- Fall Time (Typ) :
- 18 ns
- Power Dissipation-Max :
- 125W Tc
- Voltage - Rated DC :
- 600V
- Drain to Source Breakdown Voltage :
- 600V
- Lead Free :
- Contains Lead
- Operating Temperature :
- -55°C~150°C TJ
- RoHS Status :
- Non-RoHS Compliant
- Current Rating :
- 6.2A
- Width :
- 9.65mm
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Max Operating Temperature :
- 150°C
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Current - Continuous Drain (Id) @ 25°C :
- 6.2A Tc
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2017
- Drain to Source Resistance :
- 1.2Ohm
- Element Configuration :
- Single
- Rise Time :
- 23ns
- Number of Channels :
- 1
- Min Operating Temperature :
- -55°C
- Drain to Source Voltage (Vdss) :
- 600V
- Number of Pins :
- 3
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- FET Type :
- N-Channel
- Input Capacitance (Ciss) (Max) @ Vds :
- 1036pF @ 25V
- Mounting Type :
- Surface Mount
- Mount :
- Surface Mount
- Gate Charge (Qg) (Max) @ Vgs :
- 42nC @ 10V
- Weight :
- 1.437803g
- Continuous Drain Current (ID) :
- 6.2A
- Rds On Max :
- 1.2 Ω
- Packaging :
- Tube
- Height :
- 4.83mm
- Turn On Delay Time :
- 13 ns
- Datasheets
- IRFBC40AS
N-Channel Tube 1.2Ohm @ 3.7A, 10V ±30V 1036pF @ 25V 42nC @ 10V 600V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRFBC40AS Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1036pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 6.2A amps.In this device, the drain-source breakdown voltage is 600V and VGS=600V, so the drain-source breakdown voltage is 600V in this case.It is [31 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.Single MOSFETs transistor is the resistance between the drain and source of a MOSFET when the gate-to-source voltage (VGS) is applied to bias the device to the on state, and Single MOSFETs transistor is 1.2Ohm.A turn-on delay time of 13 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.To operate this transistor, you will need a 600V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
IRFBC40AS Features
a continuous drain current (ID) of 6.2A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 31 ns
single MOSFETs transistor is 1.2Ohm
a 600V drain to source voltage (Vdss)
IRFBC40AS Applications
There are a lot of Vishay Siliconix
IRFBC40AS applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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