IRFBC40A
- Mfr.Part #
- IRFBC40A
- Manufacturer
- Vishay
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 6.2A TO220AB
- Stock
- 4,287
- In Stock :
- 4,287
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Fall Time (Typ) :
- 18 ns
- Turn-Off Delay Time :
- 31 ns
- Turn On Delay Time :
- 13 ns
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Drain to Source Resistance :
- 1.2Ohm
- Supplier Device Package :
- TO-220AB
- Nominal Vgs :
- 4 V
- Width :
- 4.7mm
- Length :
- 10.41mm
- Threshold Voltage :
- 4V
- Mounting Type :
- Through Hole
- Number of Channels :
- 1
- Radiation Hardening :
- No
- Rise Time :
- 23ns
- Vgs (Max) :
- ±30V
- Rds On Max :
- 1.2 Ω
- Max Operating Temperature :
- 150°C
- Gate to Source Voltage (Vgs) :
- 30V
- Min Operating Temperature :
- -55°C
- Weight :
- 6.000006g
- RoHS Status :
- Non-RoHS Compliant
- Operating Temperature :
- -55°C~150°C TJ
- Drain to Source Voltage (Vdss) :
- 600V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Height :
- 9.01mm
- Packaging :
- Tube
- FET Type :
- N-Channel
- Input Capacitance :
- 1.036nF
- Drain to Source Breakdown Voltage :
- 600V
- Rds On (Max) @ Id, Vgs :
- 1.2Ohm @ 3.7A, 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 42nC @ 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mount :
- Through Hole
- Current - Continuous Drain (Id) @ 25°C :
- 6.2A Tc
- Number of Pins :
- 3
- REACH SVHC :
- Unknown
- Published :
- 2016
- Input Capacitance (Ciss) (Max) @ Vds :
- 1036pF @ 25V
- Continuous Drain Current (ID) :
- 6.2A
- Package / Case :
- TO-220-3
- Power Dissipation-Max :
- 125W Tc
- Element Configuration :
- Single
- Datasheets
- IRFBC40A
N-Channel Tube 1.2Ohm @ 3.7A, 10V ±30V 1036pF @ 25V 42nC @ 10V 600V TO-220-3
IRFBC40A Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1036pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 6.2A amps.In this device, the drain-source breakdown voltage is 600V and VGS=600V, so the drain-source breakdown voltage is 600V in this case.It is [31 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.Single MOSFETs transistor is the resistance between the drain and source of a MOSFET when the gate-to-source voltage (VGS) is applied to bias the device to the on state, and Single MOSFETs transistor is 1.2Ohm.A turn-on delay time of 13 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 4V.To operate this transistor, you will need a 600V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
IRFBC40A Features
a continuous drain current (ID) of 6.2A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 31 ns
single MOSFETs transistor is 1.2Ohm
a threshold voltage of 4V
a 600V drain to source voltage (Vdss)
IRFBC40A Applications
There are a lot of Vishay Siliconix
IRFBC40A applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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