IRFBC40

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Mfr.Part #
IRFBC40
Manufacturer
Vishay
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 600V 6.2A TO220AB
Stock
9,289
In Stock :
9,289

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Number of Channels :
1
Height :
9.01mm
Current - Continuous Drain (Id) @ 25°C :
6.2A Tc
Supplier Device Package :
TO-220AB
Rise Time :
18ns
Rds On (Max) @ Id, Vgs :
1.2Ohm @ 3.7A, 10V
Drain to Source Breakdown Voltage :
600V
Vgs (Max) :
±20V
Gate to Source Voltage (Vgs) :
20V
Power Dissipation :
125W
Drain to Source Voltage (Vdss) :
600V
Input Capacitance (Ciss) (Max) @ Vds :
1300pF @ 25V
Turn On Delay Time :
13 ns
Max Operating Temperature :
150°C
Min Operating Temperature :
-55°C
Drain to Source Resistance :
1.2Ohm
Continuous Drain Current (ID) :
6.2A
Weight :
6.000006g
Radiation Hardening :
No
Packaging :
Tube
Vgs(th) (Max) @ Id :
4V @ 250µA
Fall Time (Typ) :
20 ns
Number of Pins :
3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Turn-Off Delay Time :
55 ns
RoHS Status :
Non-RoHS Compliant
Number of Elements :
1
Power Dissipation-Max :
125W Tc
Rds On Max :
1.2 Ω
Input Capacitance :
1.3nF
Package / Case :
TO-220-3
Mount :
Through Hole
Mounting Type :
Through Hole
Width :
4.7mm
Element Configuration :
Single
Length :
10.41mm
FET Type :
N-Channel
Operating Temperature :
-55°C~150°C TJ
Gate Charge (Qg) (Max) @ Vgs :
60nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) :
10V
Published :
2016
Datasheets
IRFBC40
Introducing Transistors - FETs, MOSFETs - Single Vishay IRFBC40 from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1, Number of Pins:3, Package / Case:TO-220-3, Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, IRFBC40 pinout, IRFBC40 datasheet PDF, IRFBC40 amp .Beyond Transistors - FETs, MOSFETs - Single Vishay IRFBC40 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay IRFBC40


N-Channel Tube 1.2Ohm @ 3.7A, 10V ±20V 1300pF @ 25V 60nC @ 10V 600V TO-220-3

IRFBC40 Overview


CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1300pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 600V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 600V.As a result of its turn-off delay time, which is 55 ns, the device has taken time to charge its input capacitance before drain current conduction begins.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 1.2Ohm.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 13 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The transistor must receive a 600V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

IRFBC40 Features


a continuous drain current (ID) of 6.2A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 55 ns
single MOSFETs transistor is 1.2Ohm
a 600V drain to source voltage (Vdss)


IRFBC40 Applications


There are a lot of Vishay Siliconix
IRFBC40 applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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