IRFBC30STRLPBF
- Mfr.Part #
- IRFBC30STRLPBF
- Manufacturer
- Vishay
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 3.6A D2PAK
- Stock
- 20,203
- In Stock :
- 20,203
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mounting Type :
- Surface Mount
- Element Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Fall Time (Typ) :
- 14 ns
- Turn On Delay Time :
- 11 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 31nC @ 10V
- Power Dissipation :
- 3.1W
- Continuous Drain Current (ID) :
- 3.6A
- RoHS Status :
- ROHS3 Compliant
- Number of Channels :
- 1
- Height :
- 4.83mm
- Supplier Device Package :
- D2PAK
- Radiation Hardening :
- No
- Input Capacitance (Ciss) (Max) @ Vds :
- 660pF @ 25V
- Width :
- 9.65mm
- Input Capacitance :
- 660pF
- Operating Temperature :
- -55°C~150°C TJ
- Number of Elements :
- 1
- Weight :
- 1.437803g
- Mount :
- Surface Mount
- Rise Time :
- 13ns
- FET Type :
- N-Channel
- Vgs (Max) :
- ±20V
- Number of Pins :
- 3
- Rds On Max :
- 2.2 Ω
- Rds On (Max) @ Id, Vgs :
- 2.2Ohm @ 2.2A, 10V
- Packaging :
- Tape and Reel (TR)
- Length :
- 10.67mm
- Drain to Source Resistance :
- 2.2Ohm
- Max Operating Temperature :
- 150°C
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Drain to Source Voltage (Vdss) :
- 600V
- Factory Lead Time :
- 11 Weeks
- Published :
- 2013
- Power Dissipation-Max :
- 3.1W Ta 74W Tc
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Gate to Source Voltage (Vgs) :
- 20V
- Turn-Off Delay Time :
- 35 ns
- Current - Continuous Drain (Id) @ 25°C :
- 3.6A Tc
- Min Operating Temperature :
- -55°C
- Datasheets
- IRFBC30STRLPBF
N-Channel Tape & Reel (TR) 2.2Ohm @ 2.2A, 10V ±20V 660pF @ 25V 31nC @ 10V 600V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRFBC30STRLPBF Overview
A device's maximum input capacitance is 660pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 3.6A for this device. Drain current refers to the capacity of the device to conduct continuous current.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 35 ns.The Drain-to-Source Resistance (DTS) of a MOSFET is 2.2Ohm when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 11 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you need to apply a 600V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IRFBC30STRLPBF Features
a continuous drain current (ID) of 3.6A
the turn-off delay time is 35 ns
single MOSFETs transistor is 2.2Ohm
a 600V drain to source voltage (Vdss)
IRFBC30STRLPBF Applications
There are a lot of Vishay Siliconix
IRFBC30STRLPBF applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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