IRFBC30SPBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Fall Time (Typ) :

14 ns

FET Type :

N-Channel

Gate to Source Voltage (Vgs) :

20V

Height :

4.83mm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Max Operating Temperature :

150°C

Input Capacitance (Ciss) (Max) @ Vds :

660pF @ 25V

Continuous Drain Current (ID) :

3.6A

Element Configuration :

Single

Number of Pins :

3

Turn On Delay Time :

11 ns

Vgs (Max) :

±20V

Weight :

1.437803g

Contact Plating :

Tin

Turn-Off Delay Time :

35 ns

Number of Elements :

1

Supplier Device Package :

D2PAK

Published :

2015

Min Operating Temperature :

-55°C

Radiation Hardening :

No

Power Dissipation :

3.1W

Drain to Source Voltage (Vdss) :

600V

Rds On Max :

2.2 Ω

Mount :

Surface Mount

Length :

10.67mm

Number of Channels :

1

Rds On (Max) @ Id, Vgs :

2.2Ohm @ 2.2A, 10V

Width :

9.65mm

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

31nC @ 10V

Mounting Type :

Surface Mount

Packaging :

Tube

Factory Lead Time :

11 Weeks

Power Dissipation-Max :

3.1W Ta 74W Tc

Current - Continuous Drain (Id) @ 25°C :

3.6A Tc

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Vgs(th) (Max) @ Id :

4V @ 250µA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

13ns

Drain to Source Resistance :

2.2Ohm

RoHS Status :

ROHS3 Compliant

Input Capacitance :

660pF