IRFBC30PBF
- Mfr.Part #
- IRFBC30PBF
- Manufacturer
- Vishay
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 3.6A TO220AB
- Stock
- 5,992
- In Stock :
- 5,992
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Max Operating Temperature :
- 150°C
- Weight :
- 6.000006g
- Turn-Off Delay Time :
- 35 ns
- Rise Time :
- 13ns
- Rds On Max :
- 2.2 Ω
- Gate Charge (Qg) (Max) @ Vgs :
- 31nC @ 10V
- Input Capacitance :
- 660pF
- Turn On Delay Time :
- 11 ns
- Drain to Source Voltage (Vdss) :
- 600V
- REACH SVHC :
- Unknown
- Fall Time (Typ) :
- 14 ns
- Power Dissipation :
- 74W
- Power Dissipation-Max :
- 74W Tc
- Resistance :
- 2.2Ohm
- Number of Channels :
- 1
- Packaging :
- Tube
- Vgs (Max) :
- ±20V
- Voltage :
- 600V
- Number of Pins :
- 3
- Element Configuration :
- Single
- Height :
- 9.01mm
- Min Operating Temperature :
- -55°C
- Gate to Source Voltage (Vgs) :
- 20V
- Length :
- 10.41mm
- Continuous Drain Current (ID) :
- 3.6A
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- FET Type :
- N-Channel
- RoHS Status :
- ROHS3 Compliant
- Current - Continuous Drain (Id) @ 25°C :
- 3.6A Tc
- Number of Elements :
- 1
- Recovery Time :
- 810 ns
- Factory Lead Time :
- 11 Weeks
- Nominal Vgs :
- 4 V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Width :
- 4.7mm
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Lead Free :
- Lead Free
- Supplier Device Package :
- TO-220AB
- Drain to Source Breakdown Voltage :
- 600V
- Rds On (Max) @ Id, Vgs :
- 2.2Ohm @ 2.2A, 10V
- Published :
- 2007
- Mounting Type :
- Through Hole
- Operating Temperature :
- -55°C~150°C TJ
- Mount :
- Through Hole
- Current :
- 44A
- Drain to Source Resistance :
- 2.2Ohm
- Package / Case :
- TO-220-3
- Threshold Voltage :
- 4V
- Input Capacitance (Ciss) (Max) @ Vds :
- 660pF @ 25V
- Radiation Hardening :
- No
- Datasheets
- IRFBC30PBF
N-Channel Tube 2.2Ohm @ 2.2A, 10V ±20V 660pF @ 25V 31nC @ 10V 600V TO-220-3
IRFBC30PBF Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 660pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 3.6A.With a drain-source breakdown voltage of 600V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 600V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 35 ns.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET into the on state, a drain-to-source resistance of 2.2Ohm exists between the drain and source.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 11 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.4V is the threshold voltage at which an electrical device activates any of its operations.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 600V.Using drive voltage (10V) reduces this device's overall power consumption.
IRFBC30PBF Features
a continuous drain current (ID) of 3.6A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 35 ns
single MOSFETs transistor is 2.2Ohm
a threshold voltage of 4V
a 600V drain to source voltage (Vdss)
IRFBC30PBF Applications
There are a lot of Vishay Siliconix
IRFBC30PBF applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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