IRFBC30LPBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Element Configuration :

Single

Published :

2016

Threshold Voltage :

4V

Power Dissipation-Max :

3.1W Ta 74W Tc

Drain to Source Voltage (Vdss) :

600V

Mount :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

3.6A Tc

Min Operating Temperature :

-55°C

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±20V

Rise Time :

13ns

Rds On Max :

2.2 Ω

Length :

10.67mm

Width :

4.83mm

Input Capacitance :

660pF

Gate to Source Voltage (Vgs) :

20V

REACH SVHC :

Unknown

Vgs(th) (Max) @ Id :

4V @ 250µA

Input Capacitance (Ciss) (Max) @ Vds :

660pF @ 25V

FET Type :

N-Channel

Weight :

2.387001g

Number of Channels :

1

Radiation Hardening :

No

Supplier Device Package :

TO-262-3

Rds On (Max) @ Id, Vgs :

2.2Ohm @ 2.2A, 10V

Mounting Type :

Through Hole

Operating Temperature :

-55°C~150°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate Charge (Qg) (Max) @ Vgs :

31nC @ 10V

Drain to Source Resistance :

2.2Ohm

Turn-Off Delay Time :

35 ns

Turn On Delay Time :

11 ns

Max Operating Temperature :

150°C

RoHS Status :

ROHS3 Compliant

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Packaging :

Tube

Continuous Drain Current (ID) :

3.6A

Fall Time (Typ) :

14 ns

Height :

9.65mm

Number of Pins :

3