IRFBC30L

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Mfr.Part #
IRFBC30L
Manufacturer
Vishay
Package / Case
TO-262-3 Long Leads, I2Pak, TO-262AA
Datasheet
Download
Description
MOSFET N-CH 600V 3.6A I2PAK
Stock
7,123
In Stock :
7,123

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Rds On (Max) @ Id, Vgs :
2.2Ohm @ 2.2A, 10V
Current - Continuous Drain (Id) @ 25°C :
3.6A Tc
FET Type :
N-Channel
Vgs(th) (Max) @ Id :
4V @ 250µA
Power Dissipation-Max :
3.1W Ta 74W Tc
Drain to Source Voltage (Vdss) :
600V
Rise Time :
13ns
Vgs (Max) :
±20V
Operating Temperature :
-55°C~150°C TJ
Voltage - Rated DC :
600V
Input Capacitance :
660pF
Current Rating :
3.6A
Supplier Device Package :
I2PAK
Package / Case :
TO-262-3 Long Leads, I2Pak, TO-262AA
Mounting Type :
Through Hole
Gate Charge (Qg) (Max) @ Vgs :
31nC @ 10V
Packaging :
Tube
Input Capacitance (Ciss) (Max) @ Vds :
660pF @ 25V
RoHS Status :
Non-RoHS Compliant
Continuous Drain Current (ID) :
3.6A
Drive Voltage (Max Rds On,Min Rds On) :
10V
Lead Free :
Contains Lead
Published :
2017
Rds On Max :
2.2 Ω
Drain to Source Breakdown Voltage :
600V
Power Dissipation :
74W
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Mount :
Through Hole
Datasheets
IRFBC30L
Introducing Transistors - FETs, MOSFETs - Single Vishay IRFBC30L from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Package / Case:TO-262-3 Long Leads, I2Pak, TO-262AA, Mounting Type:Through Hole, IRFBC30L pinout, IRFBC30L datasheet PDF, IRFBC30L amp .Beyond Transistors - FETs, MOSFETs - Single Vishay IRFBC30L ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay IRFBC30L


N-Channel Tube 2.2Ohm @ 2.2A, 10V ±20V 660pF @ 25V 31nC @ 10V 600V TO-262-3 Long Leads, I2Pak, TO-262AA

IRFBC30L Overview


A device's maximal input capacitance is 660pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 3.6A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 600V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.This transistor requires a 600V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

IRFBC30L Features


a continuous drain current (ID) of 3.6A
a drain-to-source breakdown voltage of 600V voltage
a 600V drain to source voltage (Vdss)


IRFBC30L Applications


There are a lot of Vishay Siliconix
IRFBC30L applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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