IRFBC30ASTRR
- Mfr.Part #
- IRFBC30ASTRR
- Manufacturer
- Vishay
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 3.6A D2PAK
- Stock
- 21,155
- In Stock :
- 21,155
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rds On Max :
- 2.2 Ω
- Mounting Type :
- Surface Mount
- RoHS Status :
- Non-RoHS Compliant
- Input Capacitance :
- 510pF
- Operating Temperature :
- -55°C~150°C TJ
- Width :
- 9.65mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Length :
- 10.67mm
- Weight :
- 1.437803g
- Fall Time (Typ) :
- 12 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Rise Time :
- 13ns
- Min Operating Temperature :
- -55°C
- Turn On Delay Time :
- 9.8 ns
- Gate to Source Voltage (Vgs) :
- 30V
- Drain to Source Resistance :
- 2.2Ohm
- Packaging :
- Tape and Reel (TR)
- Max Operating Temperature :
- 150°C
- Height :
- 4.83mm
- Published :
- 2016
- Turn-Off Delay Time :
- 19 ns
- Power Dissipation-Max :
- 74W Tc
- Drain to Source Voltage (Vdss) :
- 600V
- Number of Channels :
- 1
- Input Capacitance (Ciss) (Max) @ Vds :
- 510pF @ 25V
- Vgs (Max) :
- ±30V
- Current - Continuous Drain (Id) @ 25°C :
- 3.6A Tc
- Continuous Drain Current (ID) :
- 3.6A
- Rds On (Max) @ Id, Vgs :
- 2.2Ohm @ 2.2A, 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 23nC @ 10V
- FET Type :
- N-Channel
- Element Configuration :
- Single
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Supplier Device Package :
- D2PAK
- Mount :
- Surface Mount
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheets
- IRFBC30ASTRR
N-Channel Tape & Reel (TR) 2.2Ohm @ 2.2A, 10V ±30V 510pF @ 25V 23nC @ 10V 600V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRFBC30ASTRR Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 510pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 3.6A continuous drain current (ID).Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 19 ns.This device has a drain-to-source resistance of 2.2Ohm when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 9.8 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.For this transistor to work, a voltage 600V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IRFBC30ASTRR Features
a continuous drain current (ID) of 3.6A
the turn-off delay time is 19 ns
single MOSFETs transistor is 2.2Ohm
a 600V drain to source voltage (Vdss)
IRFBC30ASTRR Applications
There are a lot of Vishay Siliconix
IRFBC30ASTRR applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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