IRFBC30ASPBF
- Mfr.Part #
- IRFBC30ASPBF
- Manufacturer
- Vishay
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 3.6A D2PAK
- Stock
- 5,469
- In Stock :
- 5,469
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- FET Type :
- N-Channel
- Input Capacitance (Ciss) (Max) @ Vds :
- 510pF @ 25V
- Element Configuration :
- Single
- Drain to Source Breakdown Voltage :
- 600V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Turn On Delay Time :
- 9.8 ns
- Height :
- 4.83mm
- Width :
- 9.65mm
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Input Capacitance :
- 510pF
- Mount :
- Surface Mount
- Supplier Device Package :
- D2PAK
- Gate Charge (Qg) (Max) @ Vgs :
- 23nC @ 10V
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Factory Lead Time :
- 8 Weeks
- Gate to Source Voltage (Vgs) :
- 30V
- Max Operating Temperature :
- 150°C
- Drain to Source Resistance :
- 2.2Ohm
- Weight :
- 1.437803g
- Power Dissipation-Max :
- 74W Tc
- Number of Elements :
- 1
- Fall Time (Typ) :
- 12 ns
- Published :
- 2016
- Rise Time :
- 13ns
- Mounting Type :
- Surface Mount
- Radiation Hardening :
- No
- Current - Continuous Drain (Id) @ 25°C :
- 3.6A Tc
- Min Operating Temperature :
- -55°C
- Turn-Off Delay Time :
- 19 ns
- Power Dissipation :
- 74W
- Continuous Drain Current (ID) :
- 3.6A
- Packaging :
- Tube
- Number of Pins :
- 3
- Length :
- 10.67mm
- Rds On Max :
- 2.2 Ω
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Operating Temperature :
- -55°C~150°C TJ
- RoHS Status :
- ROHS3 Compliant
- Rds On (Max) @ Id, Vgs :
- 2.2Ohm @ 2.2A, 10V
- Drain to Source Voltage (Vdss) :
- 600V
- Vgs (Max) :
- ±30V
- Contact Plating :
- Tin
- Number of Channels :
- 1
- Datasheets
- IRFBC30ASPBF
N-Channel Tube 2.2Ohm @ 2.2A, 10V ±30V 510pF @ 25V 23nC @ 10V 600V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRFBC30ASPBF Overview
The maximum input capacitance of this device is 510pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 3.6A.When VGS=600V, and ID flows to VDS at 600VVDS, the drain-source breakdown voltage is 600V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 19 ns.MOSFETs exhibit Drain-to-Source Resistance when a specific gate-to-source voltage (VGS) is applied to bias them into the on state, and this device's resistance is 2.2Ohm.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 9.8 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.The drain-to-source voltage (Vdss) of this transistor needs to be at 600V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
IRFBC30ASPBF Features
a continuous drain current (ID) of 3.6A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 19 ns
single MOSFETs transistor is 2.2Ohm
a 600V drain to source voltage (Vdss)
IRFBC30ASPBF Applications
There are a lot of Vishay Siliconix
IRFBC30ASPBF applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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