IRFBC30AS
- Mfr.Part #
- IRFBC30AS
- Manufacturer
- Vishay
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 3.6A D2PAK
- Stock
- 1,734
- In Stock :
- 1,734
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Voltage - Rated DC :
- 600V
- Published :
- 2016
- Min Operating Temperature :
- -55°C
- RoHS Status :
- Non-RoHS Compliant
- Element Configuration :
- Single
- Drain to Source Resistance :
- 2.2Ohm
- FET Type :
- N-Channel
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Number of Pins :
- 3
- Operating Temperature :
- -55°C~150°C TJ
- Rise Time :
- 13ns
- Supplier Device Package :
- D2PAK
- Mounting Type :
- Surface Mount
- Width :
- 9.65mm
- Mount :
- Surface Mount
- Turn-Off Delay Time :
- 19 ns
- Vgs (Max) :
- ±30V
- Rds On Max :
- 2.2 Ω
- Fall Time (Typ) :
- 12 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 510pF @ 25V
- Current Rating :
- 3.6A
- Length :
- 10.67mm
- Packaging :
- Tube
- Continuous Drain Current (ID) :
- 3.6A
- Gate to Source Voltage (Vgs) :
- 30V
- Height :
- 4.83mm
- Lead Free :
- Contains Lead
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Turn On Delay Time :
- 9.8 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 23nC @ 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Continuous Drain (Id) @ 25°C :
- 3.6A Tc
- Power Dissipation-Max :
- 74W Tc
- Max Operating Temperature :
- 150°C
- Rds On (Max) @ Id, Vgs :
- 2.2Ohm @ 2.2A, 10V
- Input Capacitance :
- 510pF
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Number of Channels :
- 1
- Weight :
- 1.437803g
- Drain to Source Voltage (Vdss) :
- 600V
- Datasheets
- IRFBC30AS
N-Channel Tube 2.2Ohm @ 2.2A, 10V ±30V 510pF @ 25V 23nC @ 10V 600V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRFBC30AS Overview
A device's maximum input capacitance is 510pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 3.6A for this device. Drain current refers to the capacity of the device to conduct continuous current.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 19 ns.The Drain-to-Source Resistance (DTS) of a MOSFET is 2.2Ohm when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 9.8 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.To operate this transistor, you need to apply a 600V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IRFBC30AS Features
a continuous drain current (ID) of 3.6A
the turn-off delay time is 19 ns
single MOSFETs transistor is 2.2Ohm
a 600V drain to source voltage (Vdss)
IRFBC30AS Applications
There are a lot of Vishay Siliconix
IRFBC30AS applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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