IRFBC30APBF
- Mfr.Part #
- IRFBC30APBF
- Manufacturer
- Vishay
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 3.6A TO220AB
- Stock
- 1,761
- In Stock :
- 1,761
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Channels :
- 1
- Current - Continuous Drain (Id) @ 25°C :
- 3.6A Tc
- Drain to Source Resistance :
- 2.2Ohm
- Width :
- 4.7mm
- Voltage :
- 600V
- Turn On Delay Time :
- 9.8 ns
- Resistance :
- 2.2Ohm
- Number of Elements :
- 1
- Power Dissipation-Max :
- 74W Tc
- Min Operating Temperature :
- -55°C
- Gate to Source Voltage (Vgs) :
- 30V
- Rds On Max :
- 2.2 Ω
- Nominal Vgs :
- 4.5 V
- Weight :
- 6.000006g
- Mounting Type :
- Through Hole
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Vgs (Max) :
- ±30V
- Rise Time :
- 13ns
- REACH SVHC :
- Unknown
- Continuous Drain Current (ID) :
- 3.6A
- Rds On (Max) @ Id, Vgs :
- 2.2Ohm @ 2.2A, 10V
- Drain to Source Breakdown Voltage :
- 600V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Input Capacitance :
- 510pF
- FET Type :
- N-Channel
- Radiation Hardening :
- No
- Fall Time (Typ) :
- 12 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 23nC @ 10V
- Max Operating Temperature :
- 150°C
- Factory Lead Time :
- 8 Weeks
- Threshold Voltage :
- 4.5V
- Package / Case :
- TO-220-3
- Element Configuration :
- Single
- Number of Pins :
- 3
- RoHS Status :
- ROHS3 Compliant
- Turn-Off Delay Time :
- 19 ns
- Lead Free :
- Lead Free
- Length :
- 10.41mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation :
- 74W
- Mount :
- Through Hole
- Height :
- 9.01mm
- Operating Temperature :
- -55°C~150°C TJ
- Current :
- 44A
- Input Capacitance (Ciss) (Max) @ Vds :
- 510pF @ 25V
- Published :
- 2004
- Packaging :
- Tube
- Supplier Device Package :
- TO-220AB
- Drain to Source Voltage (Vdss) :
- 600V
- Datasheets
- IRFBC30APBF
N-Channel Tube 2.2Ohm @ 2.2A, 10V ±30V 510pF @ 25V 23nC @ 10V 600V TO-220-3
IRFBC30APBF Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 510pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 3.6A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 600V, and this device has a drainage-to-source breakdown voltage of 600VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 19 ns.This device has a drain-to-source resistance of 2.2Ohm when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 9.8 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.In this case, the threshold voltage of the transistor is 4.5V, which means that it will not activate any of its functions when its threshold voltage reaches 4.5V.For this transistor to work, a voltage 600V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IRFBC30APBF Features
a continuous drain current (ID) of 3.6A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 19 ns
single MOSFETs transistor is 2.2Ohm
a threshold voltage of 4.5V
a 600V drain to source voltage (Vdss)
IRFBC30APBF Applications
There are a lot of Vishay Siliconix
IRFBC30APBF applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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