IRFBC30ALPBF
- Mfr.Part #
- IRFBC30ALPBF
- Manufacturer
- Vishay
- Package / Case
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 3.6A I2PAK
- Stock
- 1,608
- In Stock :
- 1,608
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Height :
- 9.65mm
- Mounting Type :
- Through Hole
- Mount :
- Through Hole
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Continuous Drain Current (ID) :
- 3.6A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs (Max) :
- ±30V
- Turn On Delay Time :
- 9.8 ns
- Radiation Hardening :
- No
- Rise Time :
- 13ns
- Threshold Voltage :
- 4.5V
- Gate to Source Voltage (Vgs) :
- 30V
- Max Operating Temperature :
- 150°C
- FET Type :
- N-Channel
- Drain to Source Resistance :
- 2.2Ohm
- Fall Time (Typ) :
- 12 ns
- RoHS Status :
- ROHS3 Compliant
- Published :
- 2011
- Gate Charge (Qg) (Max) @ Vgs :
- 23nC @ 10V
- Factory Lead Time :
- 8 Weeks
- Package / Case :
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Power Dissipation-Max :
- 74W Tc
- Element Configuration :
- Single
- Number of Channels :
- 1
- Number of Pins :
- 3
- REACH SVHC :
- Unknown
- Turn-Off Delay Time :
- 19 ns
- Operating Temperature :
- -55°C~150°C TJ
- Drain to Source Voltage (Vdss) :
- 600V
- Length :
- 10.67mm
- Width :
- 4.83mm
- Rds On Max :
- 2.2 Ω
- Min Operating Temperature :
- -55°C
- Supplier Device Package :
- I2PAK
- Weight :
- 2.387001g
- Input Capacitance (Ciss) (Max) @ Vds :
- 510pF @ 25V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Current - Continuous Drain (Id) @ 25°C :
- 3.6A Tc
- Input Capacitance :
- 510pF
- Rds On (Max) @ Id, Vgs :
- 2.2Ohm @ 2.2A, 10V
- Packaging :
- Tube
- Datasheets
- IRFBC30ALPBF
N-Channel Tube 2.2Ohm @ 2.2A, 10V ±30V 510pF @ 25V 23nC @ 10V 600V TO-262-3 Long Leads, I2Pak, TO-262AA
IRFBC30ALPBF Overview
A device's maximal input capacitance is 510pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 3.6A, which represents the maximum continuous current it can conduct.Its turn-off delay time is 19 ns, which is the time to charge the device's input capacitance before drain current conduction begins.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 2.2Ohm.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 9.8 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a 4.5V threshold voltage.This transistor requires a 600V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IRFBC30ALPBF Features
a continuous drain current (ID) of 3.6A
the turn-off delay time is 19 ns
single MOSFETs transistor is 2.2Ohm
a threshold voltage of 4.5V
a 600V drain to source voltage (Vdss)
IRFBC30ALPBF Applications
There are a lot of Vishay Siliconix
IRFBC30ALPBF applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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