IRFBC30A

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Mfr.Part #
IRFBC30A
Manufacturer
Vishay
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 600V 3.6A TO220AB
Stock
8,045
In Stock :
8,045

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Packaging :
Tube
Width :
4.7mm
Continuous Drain Current (ID) :
3.6A
Turn-Off Delay Time :
19 ns
Mounting Type :
Through Hole
Power Dissipation-Max :
74W Tc
Rds On (Max) @ Id, Vgs :
2.2Ohm @ 2.2A, 10V
Number of Channels :
1
Current - Continuous Drain (Id) @ 25°C :
3.6A Tc
Drain to Source Breakdown Voltage :
600V
Input Capacitance (Ciss) (Max) @ Vds :
510pF @ 25V
Element Configuration :
Single
Drive Voltage (Max Rds On,Min Rds On) :
10V
Height :
9.01mm
Published :
2016
Drain to Source Resistance :
2.2Ohm
Vgs (Max) :
±30V
Gate Charge (Qg) (Max) @ Vgs :
23nC @ 10V
Min Operating Temperature :
-55°C
Drain to Source Voltage (Vdss) :
600V
Fall Time (Typ) :
12 ns
Turn On Delay Time :
9.8 ns
FET Type :
N-Channel
Gate to Source Voltage (Vgs) :
30V
Rise Time :
13ns
RoHS Status :
Non-RoHS Compliant
Vgs(th) (Max) @ Id :
4.5V @ 250μA
Operating Temperature :
-55°C~150°C TJ
Max Operating Temperature :
150°C
Package / Case :
TO-220-3
Rds On Max :
2.2 Ω
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Length :
10.41mm
Number of Pins :
3
Input Capacitance :
510pF
Supplier Device Package :
TO-220AB
Mount :
Through Hole
Weight :
6.000006g
Datasheets
IRFBC30A
Introducing Transistors - FETs, MOSFETs - Single Vishay IRFBC30A from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Number of Channels:1, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-220-3, Number of Pins:3, IRFBC30A pinout, IRFBC30A datasheet PDF, IRFBC30A amp .Beyond Transistors - FETs, MOSFETs - Single Vishay IRFBC30A ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay IRFBC30A


N-Channel Tube 2.2Ohm @ 2.2A, 10V ±30V 510pF @ 25V 23nC @ 10V 600V TO-220-3

IRFBC30A Overview


The maximum input capacitance of this device is 510pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 3.6A.When VGS=600V, and ID flows to VDS at 600VVDS, the drain-source breakdown voltage is 600V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 19 ns.MOSFETs exhibit Drain-to-Source Resistance when a specific gate-to-source voltage (VGS) is applied to bias them into the on state, and this device's resistance is 2.2Ohm.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 9.8 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.The drain-to-source voltage (Vdss) of this transistor needs to be at 600V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

IRFBC30A Features


a continuous drain current (ID) of 3.6A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 19 ns
single MOSFETs transistor is 2.2Ohm
a 600V drain to source voltage (Vdss)


IRFBC30A Applications


There are a lot of Vishay Siliconix
IRFBC30A applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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