IRFBC30A
- Mfr.Part #
- IRFBC30A
- Manufacturer
- Vishay
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 3.6A TO220AB
- Stock
- 8,045
- In Stock :
- 8,045
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Packaging :
- Tube
- Width :
- 4.7mm
- Continuous Drain Current (ID) :
- 3.6A
- Turn-Off Delay Time :
- 19 ns
- Mounting Type :
- Through Hole
- Power Dissipation-Max :
- 74W Tc
- Rds On (Max) @ Id, Vgs :
- 2.2Ohm @ 2.2A, 10V
- Number of Channels :
- 1
- Current - Continuous Drain (Id) @ 25°C :
- 3.6A Tc
- Drain to Source Breakdown Voltage :
- 600V
- Input Capacitance (Ciss) (Max) @ Vds :
- 510pF @ 25V
- Element Configuration :
- Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Height :
- 9.01mm
- Published :
- 2016
- Drain to Source Resistance :
- 2.2Ohm
- Vgs (Max) :
- ±30V
- Gate Charge (Qg) (Max) @ Vgs :
- 23nC @ 10V
- Min Operating Temperature :
- -55°C
- Drain to Source Voltage (Vdss) :
- 600V
- Fall Time (Typ) :
- 12 ns
- Turn On Delay Time :
- 9.8 ns
- FET Type :
- N-Channel
- Gate to Source Voltage (Vgs) :
- 30V
- Rise Time :
- 13ns
- RoHS Status :
- Non-RoHS Compliant
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Operating Temperature :
- -55°C~150°C TJ
- Max Operating Temperature :
- 150°C
- Package / Case :
- TO-220-3
- Rds On Max :
- 2.2 Ω
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Length :
- 10.41mm
- Number of Pins :
- 3
- Input Capacitance :
- 510pF
- Supplier Device Package :
- TO-220AB
- Mount :
- Through Hole
- Weight :
- 6.000006g
- Datasheets
- IRFBC30A
N-Channel Tube 2.2Ohm @ 2.2A, 10V ±30V 510pF @ 25V 23nC @ 10V 600V TO-220-3
IRFBC30A Overview
The maximum input capacitance of this device is 510pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 3.6A.When VGS=600V, and ID flows to VDS at 600VVDS, the drain-source breakdown voltage is 600V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 19 ns.MOSFETs exhibit Drain-to-Source Resistance when a specific gate-to-source voltage (VGS) is applied to bias them into the on state, and this device's resistance is 2.2Ohm.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 9.8 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.The drain-to-source voltage (Vdss) of this transistor needs to be at 600V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
IRFBC30A Features
a continuous drain current (ID) of 3.6A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 19 ns
single MOSFETs transistor is 2.2Ohm
a 600V drain to source voltage (Vdss)
IRFBC30A Applications
There are a lot of Vishay Siliconix
IRFBC30A applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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