IRFBC20STRR

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Voltage (Vdss) :

600V

Pulsed Drain Current-Max (IDM) :

8A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±20V

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-30 Code :

R-PSSO-G2

Number of Elements :

1

HTS Code :

8541.29.00.95

Mount :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

350pF @ 25V

Current - Continuous Drain (Id) @ 25°C :

2.2A Tc

Vgs(th) (Max) @ Id :

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 10V

Qualification Status :

Not Qualified

Operating Temperature :

-55°C~150°C TJ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Continuous Drain Current (ID) :

2.2A

Rds On (Max) @ Id, Vgs :

4.4 Ω @ 1.3A, 10V

Transistor Element Material :

SILICON

Terminal Position :

Single

Number of Terminations :

2

RoHS Status :

Non-RoHS Compliant

Published :

2016

Operating Mode :

ENHANCEMENT MODE

Reach Compliance Code :

Unknown

DS Breakdown Voltage-Min :

600V

Avalanche Energy Rating (Eas) :

84 mJ

Mounting Type :

Surface Mount

Case Connection :

DRAIN

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pin Count :

3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Power Dissipation-Max :

3.1W Ta 50W Tc

Packaging :

Tape and Reel (TR)

Transistor Application :

SWITCHING

Terminal Form :

Gull wing

Pbfree Code :

No

FET Type :

N-Channel