IRFBC20SPBF
- Mfr.Part #
- IRFBC20SPBF
- Manufacturer
- Vishay
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 2.2A D2PAK
- Stock
- 8,698
- In Stock :
- 8,698
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Input Capacitance (Ciss) (Max) @ Vds :
- 350pF @ 25V
- Width :
- 9.65mm
- Length :
- 10.67mm
- Power Dissipation :
- 3.1W
- Current - Continuous Drain (Id) @ 25°C :
- 2.2A Tc
- REACH SVHC :
- Unknown
- Drain to Source Resistance :
- 4.4Ohm
- Number of Channels :
- 1
- Power Dissipation-Max :
- 3.1W Ta 50W Tc
- Turn-Off Delay Time :
- 30 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Supplier Device Package :
- D2PAK
- Min Operating Temperature :
- -55°C
- Threshold Voltage :
- 4V
- Published :
- 1997
- Element Configuration :
- Single
- RoHS Status :
- ROHS3 Compliant
- Resistance :
- 4.4Ohm
- Max Operating Temperature :
- 150°C
- Drain to Source Breakdown Voltage :
- 600V
- Turn On Delay Time :
- 10 ns
- FET Type :
- N-Channel
- Number of Elements :
- 1
- Radiation Hardening :
- No
- Lead Free :
- Lead Free
- Vgs (Max) :
- ±20V
- Mount :
- Surface Mount
- Continuous Drain Current (ID) :
- 2.2A
- Gate to Source Voltage (Vgs) :
- 20V
- Rise Time :
- 23ns
- Gate Charge (Qg) (Max) @ Vgs :
- 18nC @ 10V
- Height :
- 4.83mm
- Mounting Type :
- Surface Mount
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Operating Temperature :
- -55°C~150°C TJ
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Rds On Max :
- 4.4 Ω
- Number of Pins :
- 3
- Drain to Source Voltage (Vdss) :
- 600V
- Rds On (Max) @ Id, Vgs :
- 4.4Ohm @ 1.3A, 10V
- Fall Time (Typ) :
- 25 ns
- Weight :
- 1.437803g
- Input Capacitance :
- 350pF
- Factory Lead Time :
- 8 Weeks
- Packaging :
- Tube
- Datasheets
- IRFBC20SPBF
N-Channel Tube 4.4Ohm @ 1.3A, 10V ±20V 350pF @ 25V 18nC @ 10V 600V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRFBC20SPBF Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 350pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 600V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 600V.As a result of its turn-off delay time, which is 30 ns, the device has taken time to charge its input capacitance before drain current conduction begins.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 4.4Ohm.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 10 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 4V.The transistor must receive a 600V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IRFBC20SPBF Features
a continuous drain current (ID) of 2.2A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 30 ns
single MOSFETs transistor is 4.4Ohm
a threshold voltage of 4V
a 600V drain to source voltage (Vdss)
IRFBC20SPBF Applications
There are a lot of Vishay Siliconix
IRFBC20SPBF applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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