IRFBC20PBF
- Mfr.Part #
- IRFBC20PBF
- Manufacturer
- Vishay
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 2.2A TO220AB
- Stock
- 11,892
- In Stock :
- 11,892
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Length :
- 10.41mm
- Element Configuration :
- Single
- Min Operating Temperature :
- -55°C
- Factory Lead Time :
- 8 Weeks
- Drain to Source Voltage (Vdss) :
- 600V
- Rds On Max :
- 4.4 Ω
- Published :
- 2011
- RoHS Status :
- ROHS3 Compliant
- Current - Continuous Drain (Id) @ 25°C :
- 2.2A Tc
- Turn-Off Delay Time :
- 30 ns
- Supplier Device Package :
- TO-220AB
- Input Capacitance (Ciss) (Max) @ Vds :
- 350pF @ 25V
- REACH SVHC :
- Unknown
- Resistance :
- 4.4Ohm
- Number of Elements :
- 1
- Width :
- 4.7mm
- Lead Free :
- Lead Free
- Threshold Voltage :
- 4V
- FET Type :
- N-Channel
- Number of Channels :
- 1
- Nominal Vgs :
- 4 V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Fall Time (Typ) :
- 25 ns
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Rise Time :
- 23ns
- Gate Charge (Qg) (Max) @ Vgs :
- 18nC @ 10V
- Continuous Drain Current (ID) :
- 2.2A
- Packaging :
- Tube
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 3
- Rds On (Max) @ Id, Vgs :
- 4.4Ohm @ 1.3A, 10V
- Max Operating Temperature :
- 150°C
- Turn On Delay Time :
- 10 ns
- Drain to Source Breakdown Voltage :
- 600V
- Vgs (Max) :
- ±20V
- Package / Case :
- TO-220-3
- Weight :
- 6.000006g
- Drain to Source Resistance :
- 4.4Ohm
- Input Capacitance :
- 350pF
- Contact Plating :
- Tin
- Operating Temperature :
- -55°C~150°C TJ
- Power Dissipation-Max :
- 50W Tc
- Mounting Type :
- Through Hole
- Mount :
- Through Hole
- Height :
- 9.01mm
- Power Dissipation :
- 50W
- Gate to Source Voltage (Vgs) :
- 20V
- Datasheets
- IRFBC20PBF
N-Channel Tube 4.4Ohm @ 1.3A, 10V ±20V 350pF @ 25V 18nC @ 10V 600V TO-220-3
IRFBC20PBF Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 350pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 2.2A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 600V, and this device has a drainage-to-source breakdown voltage of 600VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 30 ns.This device has a drain-to-source resistance of 4.4Ohm when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 10 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In this case, the threshold voltage of the transistor is 4V, which means that it will not activate any of its functions when its threshold voltage reaches 4V.For this transistor to work, a voltage 600V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IRFBC20PBF Features
a continuous drain current (ID) of 2.2A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 30 ns
single MOSFETs transistor is 4.4Ohm
a threshold voltage of 4V
a 600V drain to source voltage (Vdss)
IRFBC20PBF Applications
There are a lot of Vishay Siliconix
IRFBC20PBF applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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