IRFBC20L
- Mfr.Part #
- IRFBC20L
- Manufacturer
- Vishay
- Package / Case
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 2.2A I2PAK
- Stock
- 47,087
- In Stock :
- 47,087
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Continuous Drain Current (ID) :
- 2.2A
- Length :
- 10.67mm
- Element Configuration :
- Single
- Rise Time :
- 23ns
- Rds On Max :
- 4.4 Ω
- Published :
- 2017
- Number of Channels :
- 1
- Min Operating Temperature :
- -55°C
- Mounting Type :
- Through Hole
- Vgs (Max) :
- ±20V
- Power Dissipation-Max :
- 3.1W Ta 50W Tc
- Power Dissipation :
- 50W
- Mount :
- Through Hole
- Voltage - Rated DC :
- 600V
- Current - Continuous Drain (Id) @ 25°C :
- 2.2A Tc
- Operating Temperature :
- -55°C~150°C TJ
- Width :
- 4.83mm
- Weight :
- 2.387001g
- Supplier Device Package :
- I2PAK
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Drain to Source Breakdown Voltage :
- 600V
- Turn-Off Delay Time :
- 30 ns
- Input Capacitance :
- 350pF
- Height :
- 9.65mm
- RoHS Status :
- Non-RoHS Compliant
- Input Capacitance (Ciss) (Max) @ Vds :
- 350pF @ 25V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rds On (Max) @ Id, Vgs :
- 4.4Ohm @ 1.3A, 10V
- Drain to Source Voltage (Vdss) :
- 600V
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 18nC @ 10V
- Packaging :
- Tube
- Fall Time (Typ) :
- 25 ns
- Current Rating :
- 2.2A
- Lead Free :
- Contains Lead
- Gate to Source Voltage (Vgs) :
- 20V
- Turn On Delay Time :
- 10 ns
- Package / Case :
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Max Operating Temperature :
- 150°C
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Drain to Source Resistance :
- 4.4Ohm
- Datasheets
- IRFBC20L
N-Channel Tube 4.4Ohm @ 1.3A, 10V ±20V 350pF @ 25V 18nC @ 10V 600V TO-262-3 Long Leads, I2Pak, TO-262AA
IRFBC20L Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 350pF @ 25V.This device has a continuous drain current (ID) of [2.2A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=600V, the drain-source breakdown voltage is 600V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 30 ns.MOSFETs have 4.4Ohm resistance between the drain and the source when biased into the on state by a gate-to-source voltage (VGS).During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 10 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to operate this transistor, a voltage of 600V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IRFBC20L Features
a continuous drain current (ID) of 2.2A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 30 ns
single MOSFETs transistor is 4.4Ohm
a 600V drain to source voltage (Vdss)
IRFBC20L Applications
There are a lot of Vishay Siliconix
IRFBC20L applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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