IRFBA90N20DPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Fall Time (Typ) :

77 ns

Case Connection :

DRAIN

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Drain Current-Max (Abs) (ID) :

95A

Package / Case :

TO-273AA

Turn-Off Delay Time :

39 ns

Turn On Delay Time :

23 ns

Number of Terminations :

3

Element Configuration :

Single

Rds On (Max) @ Id, Vgs :

23m Ω @ 59A, 10V

Vgs(th) (Max) @ Id :

5V @ 250μA

FET Type :

N-Channel

RoHS Status :

ROHS3 Compliant

Rise Time :

160ns

Power Dissipation-Max :

650W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Height :

15.0114mm

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

30V

Input Capacitance (Ciss) (Max) @ Vds :

6080pF @ 25V

Length :

10.9982mm

Series :

HEXFET®

Threshold Voltage :

5V

Operating Temperature :

-55°C~175°C TJ

REACH SVHC :

No SVHC

Lead Free :

Lead Free

Drain to Source Breakdown Voltage :

200V

Dual Supply Voltage :

200V

Packaging :

Tube

Number of Pins :

3

Vgs (Max) :

±30V

Gate Charge (Qg) (Max) @ Vgs :

240nC @ 10V

Width :

5mm

Radiation Hardening :

No

Current - Continuous Drain (Id) @ 25°C :

98A Tc

Mount :

Through Hole

ECCN Code :

EAR99

Additional Feature :

AVALANCHE RATED

Resistance :

23Ohm

Number of Elements :

1

Power Dissipation :

650W

Avalanche Energy Rating (Eas) :

960 mJ

Factory Lead Time :

25 Weeks

Nominal Vgs :

5 V

Voltage - Rated DC :

200V

Current Rating :

98A

Published :

2004

Continuous Drain Current (ID) :

98A

Mounting Type :

Through Hole