IRFBA90N20DPBF

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

Number of Pins :

3

Power Dissipation :

650W

Threshold Voltage :

5V

Fall Time (Typ) :

77 ns

Radiation Hardening :

No

Mounting Type :

Through Hole

Series :

HEXFET®

Package / Case :

TO-273AA

Mount :

Through Hole

FET Type :

N-Channel

Dual Supply Voltage :

200V

Element Configuration :

Single

Rise Time :

160ns

Vgs(th) (Max) @ Id :

5V @ 250μA

Gate to Source Voltage (Vgs) :

30V

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

23m Ω @ 59A, 10V

Gate Charge (Qg) (Max) @ Vgs :

240nC @ 10V

Current Rating :

98A

Factory Lead Time :

25 Weeks

Height :

15.0114mm

Continuous Drain Current (ID) :

98A

Case Connection :

DRAIN

Packaging :

Tube

Drain Current-Max (Abs) (ID) :

95A

Turn-Off Delay Time :

39 ns

Operating Temperature :

-55°C~175°C TJ

Published :

2004

Nominal Vgs :

5 V

Turn On Delay Time :

23 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Voltage - Rated DC :

200V

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

650W Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Additional Feature :

AVALANCHE RATED

Number of Terminations :

3

Vgs (Max) :

±30V

Input Capacitance (Ciss) (Max) @ Vds :

6080pF @ 25V

REACH SVHC :

No SVHC

Length :

10.9982mm

Lead Free :

Lead Free

Width :

5mm

Resistance :

23Ohm

Operating Mode :

ENHANCEMENT MODE

Drain to Source Breakdown Voltage :

200V

Transistor Element Material :

SILICON

Avalanche Energy Rating (Eas) :

960 mJ

Current - Continuous Drain (Id) @ 25°C :

98A Tc