IRFBA1405PPBF

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

20V

Additional Feature :

High Reliability

Mount :

Through Hole

Current Rating :

174A

Factory Lead Time :

12 Weeks

Packaging :

Tube

Length :

10.9982mm

Package / Case :

TO-273AA

Number of Terminations :

3

ECCN Code :

EAR99

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

5m Ω @ 101A, 10V

Lead Free :

Lead Free

Series :

HEXFET®

Power Dissipation :

330W

FET Type :

N-Channel

Drain to Source Breakdown Voltage :

55V

Resistance :

5mOhm

Fall Time (Typ) :

110 ns

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

5480pF @ 25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

260nC @ 10V

Turn On Delay Time :

13 ns

Number of Pins :

3

Avalanche Energy Rating (Eas) :

560 mJ

Width :

5mm

Radiation Hardening :

No

Power Dissipation-Max :

330W Tc

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

4V @ 250µA

Current - Continuous Drain (Id) @ 25°C :

174A Tc

Operating Mode :

ENHANCEMENT MODE

Height :

15mm

Published :

2002

Operating Temperature :

-40°C~175°C TJ

Continuous Drain Current (ID) :

174A

Voltage - Rated DC :

55V

Mounting Type :

Through Hole

Vgs (Max) :

±20V

Turn-Off Delay Time :

130 ns

Case Connection :

DRAIN

Element Configuration :

Single

Rise Time :

190ns

Transistor Element Material :

SILICON

Pulsed Drain Current-Max (IDM) :

680A

Drive Voltage (Max Rds On,Min Rds On) :

10V