IRFBA1405PPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Through Hole

Power Dissipation :

330W

Gate Charge (Qg) (Max) @ Vgs :

260nC @ 10V

Published :

2002

Voltage - Rated DC :

55V

Vgs(th) (Max) @ Id :

4V @ 250µA

ECCN Code :

EAR99

Height :

15mm

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Turn-Off Delay Time :

130 ns

Vgs (Max) :

±20V

Input Capacitance (Ciss) (Max) @ Vds :

5480pF @ 25V

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Avalanche Energy Rating (Eas) :

560 mJ

Current - Continuous Drain (Id) @ 25°C :

174A Tc

Number of Pins :

3

Operating Temperature :

-40°C~175°C TJ

Length :

10.9982mm

Power Dissipation-Max :

330W Tc

Number of Elements :

1

Series :

HEXFET®

Continuous Drain Current (ID) :

174A

Mounting Type :

Through Hole

Gate to Source Voltage (Vgs) :

20V

Rise Time :

190ns

Drain to Source Breakdown Voltage :

55V

Factory Lead Time :

12 Weeks

Resistance :

5mOhm

RoHS Status :

ROHS3 Compliant

Packaging :

Tube

Package / Case :

TO-273AA

Turn On Delay Time :

13 ns

Current Rating :

174A

Fall Time (Typ) :

110 ns

Transistor Element Material :

SILICON

Number of Terminations :

3

Transistor Application :

SWITCHING

Width :

5mm

Rds On (Max) @ Id, Vgs :

5m Ω @ 101A, 10V

Pulsed Drain Current-Max (IDM) :

680A

Case Connection :

DRAIN

Radiation Hardening :

No

Additional Feature :

High Reliability