IRFBA1405P

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Surface Mount :

No

Drain-source On Resistance-Max :

0.005ohm

Qualification Status :

Not Qualified

Transistor Element Material :

SILICON

RoHS Status :

Non-RoHS Compliant

Packaging :

Tube

Additional Feature :

High Reliability

Input Capacitance (Ciss) (Max) @ Vds :

5480pF @ 25V

Current - Continuous Drain (Id) @ 25°C :

174A Tc

Drain Current-Max (Abs) (ID) :

95A

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

5m Ω @ 101A, 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Application :

SWITCHING

Terminal Position :

Single

Avalanche Energy Rating (Eas) :

560 mJ

Case Connection :

DRAIN

Vgs(th) (Max) @ Id :

4V @ 250µA

Operating Mode :

ENHANCEMENT MODE

DS Breakdown Voltage-Min :

55V

Package / Case :

TO-273AA

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation-Max :

330W Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pulsed Drain Current-Max (IDM) :

680A

Series :

HEXFET®

Mounting Type :

Through Hole

Operating Temperature :

-40°C~175°C TJ

Drain to Source Voltage (Vdss) :

55V

Published :

2002

Gate Charge (Qg) (Max) @ Vgs :

260nC @ 10V

Vgs (Max) :

±20V

Number of Terminations :

3

JESD-30 Code :

R-PSIP-T3

ECCN Code :

EAR99

Number of Elements :

1