IRFBA1404PPBF

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Mfr.Part #
IRFBA1404PPBF
Manufacturer
Infineon Technologies
Package / Case
TO-273AA
Datasheet
Download
Description
MOSFET N-CH 40V 206A SUPER-220
Stock
34,223
In Stock :
34,223

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Turn-Off Delay Time :
72 ns
Rise Time :
140ns
Fall Time (Typ) :
26 ns
Transistor Application :
SWITCHING
Gate to Source Voltage (Vgs) :
20V
Power Dissipation :
300W
Number of Terminations :
3
Number of Pins :
3
Length :
10.9982mm
Pulsed Drain Current-Max (IDM) :
650A
Drive Voltage (Max Rds On,Min Rds On) :
10V
Published :
2004
FET Type :
N-Channel
Input Capacitance (Ciss) (Max) @ Vds :
7360pF @ 25V
Drain to Source Breakdown Voltage :
40V
Voltage - Rated DC :
40V
ECCN Code :
EAR99
Gate Charge (Qg) (Max) @ Vgs :
200nC @ 10V
Height :
15mm
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Avalanche Energy Rating (Eas) :
480 mJ
Lead Free :
Lead Free
Drain Current-Max (Abs) (ID) :
95A
Number of Elements :
1
Additional Feature :
AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Package / Case :
TO-273AA
Series :
HEXFET®
Case Connection :
DRAIN
Current - Continuous Drain (Id) @ 25°C :
206A Tc
Mount :
Through Hole
Operating Mode :
ENHANCEMENT MODE
Vgs(th) (Max) @ Id :
4V @ 250µA
Radiation Hardening :
No
Width :
5mm
Current Rating :
206A
Packaging :
Tube
RoHS Status :
ROHS3 Compliant
Resistance :
3.7mOhm
Factory Lead Time :
12 Weeks
Operating Temperature :
-40°C~175°C TJ
Continuous Drain Current (ID) :
206A
Element Configuration :
Single
Turn On Delay Time :
17 ns
Transistor Element Material :
SILICON
Vgs (Max) :
±20V
Power Dissipation-Max :
300W Tc
Rds On (Max) @ Id, Vgs :
3.7m Ω @ 95A, 10V
Mounting Type :
Through Hole
Datasheets
IRFBA1404PPBF
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies IRFBA1404PPBF from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Number of Pins:3, Package / Case:TO-273AA, Operating Temperature:-40°C~175°C TJ, Mounting Type:Through Hole, IRFBA1404PPBF pinout, IRFBA1404PPBF datasheet PDF, IRFBA1404PPBF amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies IRFBA1404PPBF ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IRFBA1404PPBF


N-Channel Tube 3.7m Ω @ 95A, 10V ±20V 7360pF @ 25V 200nC @ 10V TO-273AA

IRFBA1404PPBF Overview


When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 480 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 7360pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 206A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=40V. And this device has 40V drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 95A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 72 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 650A.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 17 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.By using drive voltage (10V), this device helps reduce its overall power consumption.

IRFBA1404PPBF Features


the avalanche energy rating (Eas) is 480 mJ
a continuous drain current (ID) of 206A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 72 ns
based on its rated peak drain current 650A.


IRFBA1404PPBF Applications


There are a lot of Infineon Technologies
IRFBA1404PPBF applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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