IRFB9N65APBF-BE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

20 ns

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

1417 pF @ 25 V

Vgs(th) (Max) @ Id :

4V @ 250µA

Subcategory :

MOSFETs

Gate Charge (Qg) (Max) @ Vgs :

48 nC @ 10 V

Packaging :

Tube

Product Type :

MOSFET

Transistor Polarity :

N-Channel

Product Category :

MOSFET

Current - Continuous Drain (Id) @ 25°C :

8.5A (Tc)

FET Feature :

-

Minimum Operating Temperature :

- 55 C

Configuration :

Single

Mounting Style :

Through Hole

Number of Channels :

1 Channel

Transistor Type :

1 N-Channel

Drain to Source Voltage (Vdss) :

650 V

Rds On (Max) @ Id, Vgs :

930mOhm @ 5.1A, 10V

Maximum Operating Temperature :

+ 150 C

Product Status :

Active

Vgs (Max) :

±30V

Power Dissipation (Max) :

167W (Tc)

Channel Mode :

Enhancement

Package :

Tube

Manufacturer :

Vishay

Mounting Type :

Through Hole

Supplier Device Package :

TO-220AB

Base Product Number :

IRFB9

RoHS :

Details

Package / Case :

TO-220-3

Brand :

Vishay / Siliconix

Series :

-

Operating Temperature :

-55°C ~ 150°C (TJ)