IRFB9N65APBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Turn On Delay Time :

14 ns

Package / Case :

TO-220-3

Width :

4.7mm

Gate to Source Voltage (Vgs) :

30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

8.5A

Element Configuration :

Single

Vgs (Max) :

±30V

Gate Charge (Qg) (Max) @ Vgs :

48nC @ 10V

Mount :

Through Hole

Input Capacitance :

1.417nF

Number of Pins :

3

Rds On Max :

930 mΩ

Current - Continuous Drain (Id) @ 25°C :

8.5A Tc

Recovery Time :

739 ns

Power Dissipation :

167W

Threshold Voltage :

4V

REACH SVHC :

Unknown

Input Capacitance (Ciss) (Max) @ Vds :

1417pF @ 25V

Lead Free :

Lead Free

Operating Temperature :

-55°C~150°C TJ

Resistance :

930mOhm

Height :

9.01mm

Fall Time (Typ) :

18 ns

Rise Time :

20ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rds On (Max) @ Id, Vgs :

930mOhm @ 5.1A, 10V

Min Operating Temperature :

-55°C

Max Operating Temperature :

150°C

Number of Elements :

1

Length :

10.41mm

Packaging :

Tube

Drain to Source Resistance :

930mOhm

Vgs(th) (Max) @ Id :

4V @ 250µA

Contact Plating :

Tin

Weight :

6.000006g

Factory Lead Time :

8 Weeks

Power Dissipation-Max :

167W Tc

Number of Channels :

1

Mounting Type :

Through Hole

Radiation Hardening :

No

Drain to Source Voltage (Vdss) :

650V

Nominal Vgs :

4 V

Turn-Off Delay Time :

34 ns

Supplier Device Package :

TO-220AB

RoHS Status :

ROHS3 Compliant