IRFB9N60APBF-BE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Channels :

1 Channel

Product Type :

MOSFET

Package / Case :

TO-220-3

Operating Temperature :

-55°C ~ 150°C (TJ)

Mounting Style :

Through Hole

Vgs(th) (Max) @ Id :

4V @ 250µA

Transistor Polarity :

N-Channel

Rds On (Max) @ Id, Vgs :

750mOhm @ 5.5A, 10V

Mounting Type :

Through Hole

Package :

Tube

Maximum Operating Temperature :

+ 150 C

Product Category :

MOSFET

Channel Mode :

Enhancement

Subcategory :

MOSFETs

Series :

-

FET Feature :

-

Minimum Operating Temperature :

- 55 C

Supplier Device Package :

TO-220AB

Base Product Number :

IRFB9

Power Dissipation (Max) :

170W (Tc)

Packaging :

Tube

Product Status :

Active

FET Type :

N-Channel

Transistor Type :

1 N-Channel

Gate Charge (Qg) (Max) @ Vgs :

49 nC @ 10 V

Manufacturer :

Vishay

Rise Time :

25 ns

Vgs (Max) :

±30V

Input Capacitance (Ciss) (Max) @ Vds :

1400 pF @ 25 V

Configuration :

Single

RoHS :

Details

Brand :

Vishay / Siliconix

Current - Continuous Drain (Id) @ 25°C :

9.2A (Tc)

Drain to Source Voltage (Vdss) :

600 V